Hard silicon carbonitride films obtained by RF-plasma-enhanced chemical vapour deposition using the single-source precursor bis(trimethylsilyl)carbodiimide

Zhou, Yanping; Probst, Daniel; Thißen, Andreas; Kroke, Edwin; Riedel, Ralf; Hauser, Ralf; Hoche, Holger; Broszeit, E.; Kroll, Peter; Stafast, H.

doi:10.1016/j.jeurceramsoc.2005.02.004

Cited by 51 publications

(62 citation statements)

References 53 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In view of the RBS and ERDA data for the film deposited at T S ¼ 300 8C its atomic composition is as follows; It is worth noting that the oxygen contamination (ranging from 8 at.-% to 40 at.-%) is also reported for SiCN films produced by plasma CVD. [6,[19][20][21] Thus, the results of FTIR, XPS, RBS, and ERDA analyses prove that the investigated films are hydrogenated silicon carbonitride materials. The atomic force microscopy (AFM) examination of SiCN films revealed that the surface was very smooth, defect-free, and exhibited an excellent morphological homogeneity.…”

mentioning

confidence: 58%

“…They are promising coating materials in advanced technology. Most recent reports [1][2][3][4][5][6] revealed many unique features of SiCN films which may be used as hard, dense, and high temperatureand corrosion-resistant coatings for metals (giving excellent tribological behavior), as well as highly selective gas separation membranes. [7] Of the various methods based on the gas-phase processes which are used for the formation of SiCN films, remote microwave plasma (RP)CVD from organosilicon precursors, developed in our laboratory, appeared to be a very useful technique, offering wellcontrolled deposition conditions free of film-damaging effects.…”

mentioning

confidence: 99%

“…100 8C (Fig. 3b), SiCN films deposited by direct radio frequency (RF) plasma CVD from bis(trimethylsilyl)carbodiimide, [6] electron cyclotron resonance (ECR) plasma CVD from a SiH 4 /CH 4 /N 2 mixture, [19] and RF sputter deposition using a N 2 /Ar mixture as the sputtering gas and SiC as the target, [22] exhibited much rougher surfaces with the roughness varying in the ranges; R rms ¼ 2.7 À 4.7 nm, [6] R rms ¼ 3.5 À 6.3 nm, [19] and R rms ¼ 15 À 65 nm. [22] An important film property, which is assumed to depend strongly on crosslinking, is density, r. This parameter was calculated from independently determined mass and thickness values, measured gravimetrically and ellipsometrically, respectively.…”

mentioning

confidence: 99%

See 2 more Smart Citations

Silicon Carbonitride (SiCN) Films by Remote Hydrogen Microwave Plasma CVD from Tris(dimethylamino)silane as Novel Single‐Source Precursor

Wróbel

Blaszczyk-Lezak

Uznański

et al. 2010

Chemical Vapor Deposition

View full text Add to dashboard Cite

Owing to a complex structure composed of carbidic Si-C and nitridic Si-N and C-N units, silicon carbonitride (SiCN) films display many unique properties. They are promising coating materials in advanced technology. Most recent reports [1][2][3][4][5][6] revealed many unique features of SiCN films which may be used as hard, dense, and high temperatureand corrosion-resistant coatings for metals (giving excellent tribological behavior), as well as highly selective gas separation membranes. [7] Of the various methods based on the gas-phase processes which are used for the formation of SiCN films, remote microwave plasma (RP)CVD from organosilicon precursors, developed in our laboratory, appeared to be a very useful technique, offering wellcontrolled deposition conditions free of film-damaging effects.[2]In this communication we report on the fabrication of amorphous SiCN films by RPCVD using hydrogen as an upstream gas for microwave plasma generation, and tris(dimethylamino)silane (TrDMAS), (Me 2 N) 3 SiH, as a novel single-source precursor, being a carrier of Si-N and C-N units. Owing to the presence of hydrosilyl, Si-H bonds in the TrDMAS molecule, this precursor is strongly reactive with hydrogen atoms fed from the plasma region to the CVD reactor. Moreover, the dimethylaminosilyl, Me 2 NSi, groups of the precursor may easily undergo a condensation reaction at elevated temperatures. The present study was undertaken in view of our earlier reports on the SiCN films produced by RPCVD from other aminosilane precursors, such as (dimethylamino)dimethylsilane, [8][9][10] Me 2 NSiHMe 2 , and bis(dimethylamino)methylsilane, [11,12] (Me 2 N) 2 SiHMe, which revealed their very promising useful properties. We describe the effect of substrate temperature on the growth rate, chemical structure, surface morphology, density, and photoluminescence of produced SiCN films. Figure 1 shows the effect of thermal activation on the kinetics of SiCN film growth from TrDMAS characterized by the substrate temperature, T S , dependency of the thickness-based film growth rate, r d , determined in the form of an Arrhenius plot. The decrease of r d with increasing T S (Fig. 1) and the negative value of the apparent activation energy E a ¼ À14 kJ mol À1 calculated from the slope of the Arrhenius plot, implies that film growth is mainly limited by the adsorption of film-forming precursors from the gas phase onto the growth surface. In this case, the apparent activation energy is expressed as E a ¼ E r þ DH ad , where E r denotes the activation energy of the film-forming reaction and DH ad is the apparent heat of adsorption of the film-forming precursors onto the growth surface and has a negative value, [13,14] thus the negative E a values are due to the fact that the absolute DH ad value is higher than the E r value.

show abstract

mentioning

confidence: 58%

mentioning

confidence: 99%

mentioning

confidence: 99%

See 1 more Smart Citation

Silicon Carbonitride (SiCN) Films by Remote Hydrogen Microwave Plasma CVD from Tris(dimethylamino)silane as Novel Single‐Source Precursor

Wróbel

Blaszczyk-Lezak

Uznański

et al. 2010

Chemical Vapor Deposition

View full text Add to dashboard Cite

show abstract

“…Moreover, a significantly lower concentration of active species contributing to RP-CVD, compared with that of DP-CVD, markedly reduces the growth step in the gas phase, thereby preventing the formation of powder particles, which often contaminate the DP-CVD films. [10] Owing to these aspects, RP-CVD is very advantageous for the production of defect-free and morphologically homogeneous SiC and SiCN films.…”

Section: Introductionmentioning

confidence: 99%

Reactivity of organosilicon precursors in remote hydrogen microwave plasma chemical vapor deposition of silicon carbide and silicon carbonitride thin‐film coatings

Wróbel

Walkiewicz-Pietrzykowska

Blaszczyk-Lezak

2009

Applied Organom Chemis

View full text Add to dashboard Cite

A number of organosilicon precursors for silicon carbide and silicon carbonitride thin-film coatings, such as silanes, carbosilanes, aminosilanes, and disilazane, respectively, were characterized in terms of their reactivity in a remote microwave plasma chemical vapor deposition process, which was induced using hydrogen as plasma generating gas. The process displayed high selectivity with respect to the activating species and the chemical bonds in the molecular structure of the precursors. In view of very short life times of excited hydrogen plasma species the activation step takes place with an exclusive contribution of ground-state hydrogen atoms. The C-H, C-C, Si-C, Si-N, C-N and N-H bonds present in the molecules of the precursors are non-reactive and only the Si-H or Si-Si bonds play a key role in the activation step. The reactivity of the precursors was characterized in a quantitative way by the yield of the film growth parameter. The yield parameter expressing the mass of film per unit mass of the precursor fed to the reactor was calculated from the slopes of linear plots of time dependencies of film mass and precursor mass, which were determined for each investigated precursor. The reactivity of the precursors was found to be strongly dependent on the number of the Si-H units present in their molecules and those containing two Si-H units appeared to be most reactive.

show abstract

“…The tribological properties of various types of SiC x N y films and coatings have been studied and compared [57][58][59][60][61]. However, in most cases the deformation mechanism or the failure dynamic were neglected.…”

Section: Introductionmentioning

confidence: 99%

On the Importance of Combined Scratch/Acoustic Emission Test Evaluation: SiC and SiCN Thin Films Case Study

et al. 2018

View full text Add to dashboard Cite

Abstract:The scratch test, as probably the most widespread technique for assessment of the adhesive/cohesive properties of a film-substrate system, fully depends on reliable evaluation based on assessment of critical loads for systems' failures. Traditionally used evaluation methods (depth change record and visual observation) may sometimes give misleading conclusions about the failure dynamics, especially in the case of opaque films. Therefore, there is a need for another independent evaluation technique with the potential to complete the existing approaches. The nondestructive method of acoustic emission, which detects the elastic waves emitted during film cracking and delamination, can be regarded as a convenient candidate for such a role even at nano/micro scale. The strength of the combination of microscopic observation of the residual groove and depth change record with the acoustic emission detection system proved to be a robust and reliable approach in analyzing adhesion/cohesion properties of thin films. The dynamics of the gradual damage taking place during the nano/micro scratch test revealed by the combined approach is presented for SiC and SiCN thin films. Comparison of critical load values clearly reflects the higher ability of the AE approach in detecting the initial material failure compared to the visual observation.

show abstract

Hard silicon carbonitride films obtained by RF-plasma-enhanced chemical vapour deposition using the single-source precursor bis(trimethylsilyl)carbodiimide

Cited by 51 publications

References 53 publications

Silicon Carbonitride (SiCN) Films by Remote Hydrogen Microwave Plasma CVD from Tris(dimethylamino)silane as Novel Single‐Source Precursor

Silicon Carbonitride (SiCN) Films by Remote Hydrogen Microwave Plasma CVD from Tris(dimethylamino)silane as Novel Single‐Source Precursor

Reactivity of organosilicon precursors in remote hydrogen microwave plasma chemical vapor deposition of silicon carbide and silicon carbonitride thin‐film coatings

On the Importance of Combined Scratch/Acoustic Emission Test Evaluation: SiC and SiCN Thin Films Case Study

Contact Info

Product

Resources

About