Heterojunction solar cells on cuprous oxide

Papadimitriou, L.; Economou, N. A.; Trivich, D.

doi:10.1016/0379-6787(81)90084-3

Cited by 95 publications

(44 citation statements)

References 6 publications

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“…Cu 2 O, a non-toxic semiconductor, is an attractive alternative absorber material for photovoltaic applications [1][2][3][4]. There have been many reports on various Cu 2 O-based solar cells fabricated using Cu 2 O as the active layer [5][6][7][8][9][10][11][12][13] and having a theoretical maximum energy conversion efficiency of about 20% [9]. Therefore, the synthesis of good quality Cu 2 O is mandatory.…”

Section: Introductionmentioning

confidence: 99%

Synthesis and characterization of ZnO/Cu2O core–shell nanowires grown by two-step electrodeposition method

Messaoudi

Makhlouf

Souissi

et al. 2015

Applied Surface Science

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Section: Introductionmentioning

confidence: 99%

Synthesis and characterization of ZnO/Cu2O core–shell nanowires grown by two-step electrodeposition method

Messaoudi

Makhlouf

Souissi

et al. 2015

Applied Surface Science

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“…Ohmic contacts were performed on Cu 2 O by thermal evaporation of gold ͑Au͒ with the diameter of 0.3 mm. The schematic heterostructure is shown in Fig.…”

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confidence: 99%

Defects in Cu2O studied by deep level transient spectroscopy

Paul

Nawa

Sato

et al. 2006

Applied Physics Letters

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Hole traps in p-type Cu 2 O were studied by means of deep level transient spectroscopy in the heterostructure of p-Cu 2 O/i-ZnO/ n-ZnO. In addition to the trap level at about 0.45 eV from the valance band edge, which is already reported as being due to Cu vacancy, we found a new trap level at about 0.25 eV. The new trap is tentatively assigned as Cu-di-vacancy from the trap concentration dependence on oxygen flow rate and substrate temperature. © 2006 American Institute of Physics. ͓DOI: 10.1063/1.2175492͔ Cuprous oxide ͑Cu 2 O͒, a direct band gap semiconductor with a band gap energy of 2.0 eV, has been regarded as one of the most promising materials for application to photovoltaic cells, 1,2 especially for the top cell in a tandem structure. The attractiveness of Cu 2 O as a photovoltaic material lies in the fact that the constituent materials are nontoxic, low cost and abundantly available. Cu 2 O / ZnO heterojunction has been fabricated by radio frequency ͑rf͒ magnetron sputtering and showed the photovoltaic effects, but did not demonstrate good performance. 3 Knowledge of defect energies as well as their densities is an important input for further improvement of the performance of Cu 2 O thin film polycrystalline solar cells. There are several reports on the deep trap in Cu 2 O by measuring deep level transient spectroscopy ͑DLTS͒. 4-6 A hole trap with the activation energy of about 0.45 eV from the valence band edge has been observed and assigned as Cu vacancy using Schottky diodes. However, the temperature range in the DLTS measurements was too narrow. It is necessary to measure the DLTS in the expanded temperature range in order to understand the origin of the defect in Cu 2 O. In this work, the DLTS spectra of Cu 2 O with the junction of n-ZnO/ i-ZnO/ p-Cu 2 O structure in the temperature range between 100 and 350 K is reported. We observed a new trap with the activation energy of 0.25 eV from the valence band edge in addition to the 0.45 eV trap, and the origin of the 0.25 eV trap is discussed based on the sample preparation conditions.Polycrystalline p-Cu 2 O/n-ZnO heterostructure was grown by means of rf magnetron sputtering on Corning 7059 glass substrate using a Cu target of 99.99% purity, ZnO target and Ar as sputtering gas. Oxygen was introduced during the growth of Cu 2 O through a nozzle whose end was placed near the substrate. We prepared two sets of samples for Cu 2

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“…On the other hand, heating at high temperatures and adding much more chemicals are needed for the production of other metal oxide materials. Therefore, the production of natural mineral thin films poses a particular importance for technology [11][12][13][14] .…”

Section: Introductionmentioning

confidence: 99%

Optical and Structural Properties of Natural MnSeO4 Mineral Thin Film

Kariper

2017

Mat. Res.

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Manganese selenite (MnSeO 4 ) crystalline thin film has been produced with chemical bath deposition on substrates (commercial glass). Properties of the thin film, such as transmittance, absorption, and optical band gap and refraction index have been investigated via UV/VIS Spectrum. The structural properties of orthorhombic form have been observed in XRD. The structural and optical properties of MnSeO 4 thin films, deposited at different pH levels were analyzed. Some properties of the films have been changed with the change of pH level, which has been deeply investigated. The grain size of MnSeO 4 thin film has reached its highest value at pH 9. The refraction index and extinction coefficient of MnSeO 4 thin films were measured to be 1.53, 2.86, 2.07, 1.53 (refraction index) and 0.005, 0.029, 0.014, 0.005 (extinction coefficient) for grain sizes 21, 13, 26, and 5 nm respectively. The band gaps (Eg) of the films were measured to be 2.06, 2.57, 2.04, and 2.76 eV for the grain sizes mentioned above. The value of dielectric constant at pH 10 was calculated as 1.575.

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Heterojunction solar cells on cuprous oxide

Cited by 95 publications

References 6 publications

Synthesis and characterization of ZnO/Cu2O core–shell nanowires grown by two-step electrodeposition method

Synthesis and characterization of ZnO/Cu2O core–shell nanowires grown by two-step electrodeposition method

Defects in Cu2O studied by deep level transient spectroscopy

Optical and Structural Properties of Natural MnSeO4 Mineral Thin Film

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