HgCdTe Films Grown by MBE on CZT(211)B Substrates

Qin, Gang; Kong, Jin Cheng; Yang, Jin; Ren, Yuchen; Li, Y. H.; Yang, Chao-Wei; Li, H. F.; Wang, J. Y.; Qin, Qun; Zhao, Jun; Zhao, Pan

doi:10.1007/s11664-022-10193-w

Cited by 4 publications

(1 citation statement)

References 31 publications

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“…[ 8–10 ] Researchers are dedicated to decoupling these thermoelectric parameters to boost thermoelectric performance. [ 11–13 ] A great deal of optimizing strategies, such as band engineering, [ 14–17 ] enhancing lattice symmetry, [ 18,19 ] microstructure and entropy engineering, [ 20–23 ] are implemented to capture optimal electrical and thermal transport properties, commonly in Bi 2 Te 3 ‐based systems, [ 24,25 ] chalcogenides, [ 26–28 ] Zintl phase, [ 29,30 ] half‐Heusler, [ 31–33 ] skutterudite, [ 34,35 ] and SiGe. [ 36 ]…”

Section: Introductionmentioning

confidence: 99%

Modifying Roles of CuSbSe₂ in Realizing High Thermoelectric Performance of GeTe

Jin,

Qiu,

Bai

et al. 2024

Advanced Energy Materials

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Thermoelectric materials are widely researched for their energy conversion capabilities in the fields of power generation and refrigeration. And a superior thermoelectric conversion efficiency requires an excellent power factor and low thermal conductivity. Herein, a remarkable thermoelectric figure of merit（ZT） ∼ 2.6 at 673 K is realized in GeTe with 20% addition of CuSbSe2. Multiple synergistic effects of CuSbSe2 alloying collectively contribute to the excellent thermoelectric performance in GeTe. CuSbSe2 alloying effectively tunes ultrahigh carrier density of GeTe to the optimum. The introduction of Cu, Sb, and Se atoms create numerous point defects that scatter high‐frequency phonons. Additionally, surplus CuSbSe2 facilitates the formation of copper‐selenium phases, which embed at grain boundaries and generate interfaces after sintering. Combining the planar defects evolved from Ge vacancies, multi‐dimension defects effectively scatter multiple frequency phonons. An extraordinarily low lattice thermal conductivity of 0.3 Wm−1 K−1 at 673 K is obtained, approaching the theoretical estimation predicted by Cahill model. Eventually, the peak conversion efficiency of 7.4% is obtained in segmented device with ΔT of 419 K. The commingled effects of CuSbSe2 in GeTe further open up an elitist route to designing high‐performance materials.

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Section: Introductionmentioning

confidence: 99%

Modifying Roles of CuSbSe₂ in Realizing High Thermoelectric Performance of GeTe

Jin,

Qiu,

Bai

et al. 2024

Advanced Energy Materials

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Molecular beam epitaxial growth of HgCdTe mid-wave infrared dual-band detectors

Ren,

Qin,

Geng

et al. 2025

Infrared Physics & Technology

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Low‐frequency noise and deep‐level transient spectroscopy in LWIR Auger‐suppressed Hg_1-xCd_xTe heterostructure detector

Achtenberg,

Majkowycz,

Martyniuk

et al. 2024

Opt. Express

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Low-frequency noise spectroscopy (LFNS) along with deep-level transient spectroscopy (DLTS) are complementary and effective tools to study and characterize the carrier traps in semiconductors. These traps caused, e.g., by contamination by foreign atoms or various types of dislocations, can significantly affect quantum efficiency, dark current, responsivity, and noise generated by devices especially when operating under bias. Since DLTS is difficult to apply in high leakage current devices, LFNS can be used to overcome this limitation, so the use of both methods gives very effective and reliable results during research on various devices. In this paper, we reported a study of defects activation energies in HgCdTe Auger-suppressed long-wavelength infrared (LWIR) heterostructure-based detector using these two experimental methods. By proper structure design, the examined detector was optimized for high operating temperature (HOT) conditions ≥ 200 K. The results obtained showed that in such detectors, grown by the metal organic chemical vapor deposition (MOCVD) technique, a few traps can be extracted. The found trap levels and activation energies were located below and above the absorber bandgap, so they can be identified in both absorber and other heterostructure layers. Due to specific multilayer architecture, a precise interpretation of the results is difficult. Nevertheless, the most probable trap locations based on the current state of knowledge were discussed and proposed.

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HgCdTe Films Grown by MBE on CZT(211)B Substrates

Cited by 4 publications

References 31 publications

Modifying Roles of CuSbSe₂ in Realizing High Thermoelectric Performance of GeTe

Modifying Roles of CuSbSe₂ in Realizing High Thermoelectric Performance of GeTe

Molecular beam epitaxial growth of HgCdTe mid-wave infrared dual-band detectors

Low‐frequency noise and deep‐level transient spectroscopy in LWIR Auger‐suppressed Hg_1-xCd_xTe heterostructure detector

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HgCdTe Films Grown by MBE on CZT(211)B Substrates

Cited by 4 publications

References 31 publications

Modifying Roles of CuSbSe2 in Realizing High Thermoelectric Performance of GeTe

Modifying Roles of CuSbSe2 in Realizing High Thermoelectric Performance of GeTe

Molecular beam epitaxial growth of HgCdTe mid-wave infrared dual-band detectors

Low‐frequency noise and deep‐level transient spectroscopy in LWIR Auger‐suppressed Hg1-xCdxTe heterostructure detector

Contact Info

Product

Resources

About

Modifying Roles of CuSbSe₂ in Realizing High Thermoelectric Performance of GeTe

Modifying Roles of CuSbSe₂ in Realizing High Thermoelectric Performance of GeTe

Low‐frequency noise and deep‐level transient spectroscopy in LWIR Auger‐suppressed Hg_1-xCd_xTe heterostructure detector