Hierarchy of simulation approaches for hot carrier transport in deep submicron devices

Abstract

Rapid advances in integrated circuit technology are pushing the size of semiconductor devices into the deep submicron range. The traditional simulation approaches based on simplified transport equations are not adequate to capture the behaviour of high-energy carriers that are responsible for nonlinear transport behaviour and reliability problems. This brief review examines the complete hierarchy of device simulation approaches and analyses the capabilities and limitations of the various approaches that are available today.

(Invited) Modelling and Simulation of Advanced Semiconductor Devices

“…For device simulations, the self-consistent MC approach is suitable, since it solves the Poisson equation self consistently to determine electrostatic potential distribution in the semiconductor device. MC simulation does not make any assumption about the distribution function to approximate the carrier transport [5][6][7][8] and the carriers are considered as a particle rather than as a fluid, which makes the MC approach more general and accurate in approximating the carrier transport than the DD methods.…”

Full-band Monte Carlo simulation of high-energy carrier transport in single photon avalanche diodes: Computation of breakdown probability, time to avalanche breakdown, and jitter

“…However, as a result of the huge computational effort, approximations have to be made while keeping the main physical features. 19 In the case of a fullband computation of breakdown characteristics of SPADs efficient modeling renders the computation feasible.…”

Velocity Distribution of Electrons Escaping from a Potential Well

“…A Monte Carlo method is used that is based on Newton's equation of motion. Highly evolved three-dimensional Monte Carlo computer programs [6][7][8] are available for the simulation of semiconductor devices and the programs include sophisticated models of electron-phonon scattering. Electron escape over a potential barrier has been explored with such methods [7,9].…”