High accuracy magnetic field sensors with wide operation temperature range

Abstract

Abstract. n+InAs(Si) epitaxial thin films heavily doped by silicon and Hall effect magnetic field sensors based on this structures have been fabricated and studied. We have demonstrated the successful formation of highly doped InAs thin films (~100 nm) with the different intermediate layer arrangement and appropriate electron mobility values. Hall sensors performance parameters have been measured in wide temperature range. Obtained sensitivity varied from 1 to 40 Ω/T, while the best linearity and lower temperature coefficient have been found in the higher doped samples with lower electron mobility. We attribute this to the electron system degeneracy and decreased phonon contribution to electron mobility and resistance.