High accurate TCAD calibration methodology realizing smart-design of integrated power devices consisting of lateral-IGBT &amp;amp; Diode in SOI micro-inverters

Kato, Hisato; Harada, Shota; Yun, Chan-Su; Meniailenko, V.; Ashida, Youichi; Takahashi, Shigeki; Tokura, Norihito

doi:10.7567/ssdm.2011.p-14-18

Extended Abstracts of the 2011 International Conference on Solid State Devices and Materials 2011

DOI: 10.7567/ssdm.2011.p-14-18

|View full text |Cite

High accurate TCAD calibration methodology realizing smart-design of integrated power devices consisting of lateral-IGBT & Diode in SOI micro-inverters

Hisato Kato

Shota Harada

Chan-Su Yun³

et al.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2012

Publication Types

Select...

Article1

Relationship

Self Cite0

Independent1

Authors

Journals

Cited by 1 publication

References 1 publication

Supporting

Mentioning

Contrasting

Order By: Relevance

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

High accurate TCAD calibration methodology realizing smart-design of integrated power devices consisting of lateral-IGBT & Diode in SOI micro-inverters

Cited by 1 publication

References 1 publication

Analysis of Dynamic Avalanche Phenomenon in SOI Lateral High-speed Diode during Reverse Recovery and Development of a Novel Device Structure for Suppressing Dynamic Avalanche

Analysis of Dynamic Avalanche Phenomenon in SOI Lateral High-speed Diode during Reverse Recovery and Development of a Novel Device Structure for Suppressing Dynamic Avalanche

Contact Info

Product

Resources

About