High brightness fiber coupled diode lasers at 450 nm

Könning, Tobias; Drovs, Simon; Stoiber, Michael; König, P.; Kissel, H.; Harth, Florian; Köhler, Bernd; Biesenbach, Jens; König, Harald; Lell, A.; Stojetz, Bernhard; Ali, Muhammad; Strauß, Uwe

doi:10.1117/12.2507462

Cited by 8 publications

(2 citation statements)

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“…On the other end of the power scale, there is the need for blue light sources in the range of several kW output power. Such light sources are typically realized by combining multiple stacks of laser bars and coupling the output of these into one fiber [3,4,5,6,7,8,9]. Using polarization coupling of devices emitting at 450nm, output powers of 2 kW have been reached.…”

Section: Introductionmentioning

confidence: 99%

InGaN semiconductor laser diodes for the visible spectral range: design and process optimization of single emitters and bars for applications from mW to kW output power

Gerhard

Naehle²,

Jentzsch

et al. 2023

Gallium Nitride Materials and Devices XVIII

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InGaN lasers in the blue and green wavelength range have opened a wide variety of applications in the past years, which all require unique properties of the employed laser chips. In this paper we will show design and process developments for various InGaN laser designs, each optimized for its specific application.For applications which are very sensitive to energy consumption, like mobile AR/VR devices, we investigated InGaN laser chips with resonator lengths as short as 50 µm. To achieve this, we developed an etched facets technology to overcome the challenges of scribing and breaking for facet generation for such short resonator lengths. The etched facets of these devices are coated on-wafer with a dielectric mirror to achieve the desired reflectivity. Depending on the reflectivity chosen, these devices show ultra-low threshold currents below 3mA and output powers above 50 mW. Combined with a flip-chip design with both contacts on one side, such chips can be integrated into silicon wafer-based beam combiners to generate RBG PIC chips for VR/AR laser projection.For high power applications, we will present data of laser bars. Bars emitting at 430 nm achieved 100 W of continuouswave output power per bar and conversion efficiencies of 50%. Together with bars emitting at 450 nm, that were shown in previous publications, wavelength-multiplexing for materials-processing systems can be realized yielding blue laser light sources with multiple kilowatts of output powers.

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Section: Introductionmentioning

confidence: 99%

InGaN semiconductor laser diodes for the visible spectral range: design and process optimization of single emitters and bars for applications from mW to kW output power

Gerhard

Naehle²,

Jentzsch

et al. 2023

Gallium Nitride Materials and Devices XVIII

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“…The authors reported two types of modules, both with a wavelength of 450 nm-one module with 500 W power and a 200 µm core diameter, and the second with 550 W power with a 400 µm core fiber. The intention of this newly developed laser technology was for material processing [12]. The BDL technology at JWRI has been successfully used for cladding pure copper on a stainless steel (SS304) substrate [13,14].…”

Section: Introductionmentioning

confidence: 99%

Blue Diode Laser Welding of Commercially Pure Titanium Foils

Pasang

Lin

Misiołek

et al. 2022

QuBS

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The need for thin foil welding is increasing significantly, particularly in the electronic industries. The technologies that are currently available limit the joining processes in terms of materials and their geometries. In this paper, a series of trials of fusion welding (bead-on- plate) of commercially pure titanium (CPTi) foils were conducted using a blue diode laser (BDL) welding method. The power used was 50 W and 100 W for 0.1 mm and 0.2 mm thick foils, respectively. Following welding, various samples were prepared to examine the weld profiles, microstructures, hardness, tensile strength, and fracture surface characteristics. The results showed that the base metal (BM) had an annealed microstructure with equiaxed grains, while the weld zones contained martensite (α’) with large grains. The hardness increased in both regions, from around 123 HV to around 250 HV, in the heat-affected zone (HAZ) and fusion zone (FZ) areas. The tensile tests revealed that the strengths of the welded samples were slightly lower than the unwelded samples, i.e., UTS = 300–350 MPa compared with 325–390 MPa for the unwelded samples. Fracture took place within the BM area. All of the samples, welded and unwelded, showed identical fracture mechanisms, i.e., microvoid coalescence or ductile fracture. The weld zone experienced very small strains (elongation) at fracture, which indicates a good weld quality.

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