High Density and High Aspect Ratio GaAs/AlGaAs Nanopillar array Fabricated by Fusion of Bio-Template and Neutral Beam Etching

Abstract

III-V compound semiconductor quantum dots (QDs) photonic devices are very attractive because of their many advantages. We developed a defect-free top-down fabrication process for sub-20-nm-diameter GaAs quantum nanodisks (NDs)by using a bio-template and neutral beam etching (NBE). We successfully fabricated 100-nm-high nanopillars embedded in 8-nm-thick GaAs and 30-nm-thick Al 0.3 Ga 0.7 As barrier-stacked structures. The GaAs capping layer and Al 0.3 Ga 0.7 As barrier layer were regrown by metalorganic vapor phase epitaxy (MOVPE). We measured the photoluminescence (PL) originating from the GaAs NDs at 6 K. To realize NDs laser diodes by top-down fabrication is a great challenge.