High dielectric tunability with high thermal stability of the (111) highly oriented 0.85Pb(Mg1/3Nb2/3)-0.15PbTiO3 thin film prepared by a sol-gel method

Han, Fuzhu; Hu, Yuxin; Peng, Biaolin; Liu, Laijun; Yang, Rusen; Ren, Kailiang

doi:10.1016/j.jeurceramsoc.2021.06.034

Cited by 9 publications

(6 citation statements)

References 49 publications

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“…The decrease in T is attributed to the deterioration of leakage characteristics. In addition, the transition of preferred orientation of PMN-PT thin film from (111) to (110) may be another factor that causes T to change, which corresponds to the previous literatures [31,32]. Moreover, tanδ exhibits a tendency to first decrease before increasing with the increase in doping concentration.…”

Section: Resultssupporting

confidence: 71%

Enhanced Ferroelectric, Dielectric Properties of Fe-Doped PMN-PT Thin Films

Feng

Liu

et al. 2021

Nanomaterials

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Fe-doped 0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-PT) thin films were grown in Pt/Ti/SiO2/Si substrate by a chemical solution deposition method. Effects of the annealing temperature and doping concentration on the crystallinity, microstructure, ferroelectric and dielectric properties of thin film were investigated. High (111) preferred orientation and density columnar structure were achieved in the 2% Fe-doped PMN-PT thin film annealed at 650 °C. The preferred orientation was transferred to a random orientation as the doping concentration increased. A 2% Fe-doped PMN-PT thin film showed the effectively reduced leakage current density, which was due to the fact that the oxygen vacancies were effectively restricted and a transition of Ti4+ to Ti3+ was prevented. The optimal ferroelectric properties of 2% Fe-doped PMN-PT thin film annealed at 650 °C were identified with slim polarization-applied field loops, high saturation polarization (Ps = 78.8 µC/cm2), remanent polarization (Pr = 23.1 µC/cm2) and low coercive voltage (Ec = 100 kV/cm). Moreover, the 2% Fe-doped PMN-PT thin film annealed at 650 °C showed an excellent dielectric performance with a high dielectric constant (εr ~1300 at 1 kHz).

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Section: Resultssupporting

confidence: 71%

Enhanced Ferroelectric, Dielectric Properties of Fe-Doped PMN-PT Thin Films

Feng

Liu

et al. 2021

Nanomaterials

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“…The dielectric tunability ( η ) is defined in Equation ( 4 ) using the dielectric permittivity at zero ( ε (0)) and a certain DC electric field ( ε ( E )). The figure-of-merit (FOM) is defined in Equation ( 5 ) using dielectric loss at a certain electric field (tan δ ( E )) instead of the constant (tan δ (0)) at zero electric field [ 13 , 14 , 34 , 35 ]:

…”

Section: Resultsmentioning

confidence: 99%

“…These results indicate that the dielectric tunability, the FOM, the thermal stability, and the frequency stability of thin film can be significantly improved after annealing with ACB. Figure 6 compares the dielectric tunable performance of reported perovskite thin films with the PSNMN thin films annealed with ACB [ 6 , 11 , 14 , 36 – 38 ]. It can be seen that a higher η max is achived by the PSNMN thin films annealed with ACB at a lower applied E , as shown in Figure 6(a) ).…”

Section: Resultsmentioning

confidence: 99%

“…However, these methods often increase the volume of the overall tunable device with additional processing complicacy and costs. Therefore, the improvement of the thermal stability of tunable materials would be a more engineerable strategy, which are previously demonstrated by constructing a diffused phase transition via composition-gradient-structure [ 13 ] and elements doping [ 14 ], etc. For example, compostionaly-graded Ba (1-x) SrxTiO 3 thin film was reported with a high dielectric tunability (>70% across a range of 300 K) and a small temperature dependence (deviated in 13% over 500 K) [ 13 ].…”

Section: Introductionmentioning

confidence: 99%

“…For example, compostionaly-graded Ba (1-x) SrxTiO 3 thin film was reported with a high dielectric tunability (>70% across a range of 300 K) and a small temperature dependence (deviated in 13% over 500 K) [ 13 ]. A Nb-doped SrTiO 3 single crystal substrate with a highly (111) oriented PMN-PT relaxor ( γ ~1.81) thin film also demonstrated a high dielectric tunability (~67.5%) and a negligible variation (<2% in the temperature range from 300 K to 450 K) [ 14 ]. These methods can improve the temperature stability of the material to a certain extent, but the overall tunable performance is still much lower than expected.…”

Section: Introductionmentioning

confidence: 99%

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B-Site Nanoscale-Ordered Structure Enables Ultra-High Tunable Performance

Peng

Wang

et al. 2022

Research

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Tunable devices constructed by ferroelectric thin films are often desired to possess a low dielectric loss while maintainging a high dielectric tunability over a broad operating temperature range in applications, for example, resonators, filters, or phase shifters. However, it is difficult to simultaneously achieve these characteristics by traditional strategies, such as doping and strain modifying. Here, we demonstrate that the dielectric tunability of the sol-gel-prepared Pb(Sc1/2Nb1/2)0.9(Mg1/3Nb2/3)0.1O3 (PSNMN) thin film can be almost doubled from ~47% to ~80.0% (at 10 kHz) at a low electric field (~530 kV/cm), and the dielectric loss can be sharply reduced by more than an order of magnitude, from ~0.50 to ~0.037 (at 1 kHz) when the thin film was annealed in air at 650°C for 15 h under the help of an atmosphere-compensating-block (ACB) made from the proto-PSNMN gel. Moreover, the PSNMN thin film annealed with ACB also exhibited an extremely high thermally-stable dielectric tunability in an ultrabroad temperature range (>130 K), which could be attributed to the Maxwell-Wagner (MW) effect generated by the interface between the PSNMN disordered matrix and the B-site nanoscale-ordered structure formed during the long-term annealing process. The reduced dielectric loss is mainly benefited from the reduced concentration of oxygen vacancy and the possible MW effects, and the enhanced dielectric tunability could be ascribed to the weaker domain-pinning effect by oxygen vacancy. The breakthrough provides a new universal strategy to achieve utrahigh tunable performance in A(B’1/2B”1/2)O3 ferroelectric thin films with a B-site nanoscale-ordered structure, meanwhile it paves the way for ultraintergrated tunable thin-film-devices with great phase shifter performance in practical applications.

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Enhanced temperature stability of dielectric tunable performance of (1-x)Ba(Zr0.36Ti0.64)O3–x(Ba0.82Ca0.18)TiO3 ceramics by compositional tailored diffuse phase transition

Peng

2022

Ceramics International

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High dielectric tunability with high thermal stability of the (111) highly oriented 0.85Pb(Mg1/3Nb2/3)-0.15PbTiO3 thin film prepared by a sol-gel method

Cited by 9 publications

References 49 publications

Enhanced Ferroelectric, Dielectric Properties of Fe-Doped PMN-PT Thin Films

Enhanced Ferroelectric, Dielectric Properties of Fe-Doped PMN-PT Thin Films

B-Site Nanoscale-Ordered Structure Enables Ultra-High Tunable Performance

Enhanced temperature stability of dielectric tunable performance of (1-x)Ba(Zr0.36Ti0.64)O3–x(Ba0.82Ca0.18)TiO3 ceramics by compositional tailored diffuse phase transition

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