High-Efficiency and High-Power Multijunction InGaAs/InP Photovoltaic Laser Power Converters for 1470 nm

Abstract

The high-efficiency capabilities of multijunction laser power converters are demonstrated for high-power applications with an optical input of around 1470 nm. The InP-based photovoltaic power converting III-V semiconductor devices are designed here, with 10 lattice-matched subcells (PT10-InGaAs/InP), using thin InGaAs absorbing layers connected by transparent tunnel junctions. The results confirm that such long-wavelength power converter devices are capable of producing electrical output voltages greater than 4–5 V. The characteristics are compatible with common electronics requirements, and the optical input is well suited for propagation over long distances through fiber-based optical links. Conversion efficiencies of ~49% are measured at electrical outputs exceeding 7 W for an input wavelength of 1466 nm at 21 °C. The Power Converter Performance Chart has been updated with these PT10-InGaAs/InP results.

Technology update on patent and development trend of power over fiber: a critical review and future prospects

“…Another study reported that PPCs made of InGaAs materials have the capacity to transmit electrical energy over several kilometers 71 . Fafard and Mason also demonstrated in their research that InGaAs/InP PPCs for 1470 nm may generate electrical output voltages of more than 4 to 5 V indicating the capability of long-wavelength converter 72 . At 1520 nm InGaAs PPC, it was found that the maximum room temperature conversion efficiency was 36.9% 73 .…”

“…The PPC conversion efficiency was found to be 25%, and an optical power of up to 1 W was converted to electrical power. In the recent reported work, a breakthrough of conversion efficiency improvement up to ∼49% at 1466 nm has been demonstrated by Fafard and Masson, 72 which could be further utilized for energy management system in the near future. It is important to note that although the PoF system is able to play a role in energy management system, there are still gaps within these studies that need to be addressed such as the overall system efficiency of PoF and high cost of PoF since high powered laser, PV power converters (PPC) and special optical fibers are used.…”

“…71 Fafard and Mason also demonstrated in their research that InGaAs/InP PPCs for 1470 nm may generate electrical output voltages of more than 4 to 5 V indicating the capability of long-wavelength converter. 72 At 1520 nm InGaAs PPC, it was found that the maximum room temperature conversion efficiency was 36.9%. 73 In most cases, PPC contributes most of the power loss in the PoF system since they do not generally have high conversion efficiency.…”

A noval method of determining bias lights for spectral response measurement of GaAs multi-junction laser power converters and its applications

“…In recent years, laser power converters (LPCs) have been widely studied as a promising technology for wireless power transmission [1][2][3][4][5]. The record LPC efficiencies have all been achieved through vertically stacked multi-junction architectures with low ohmic losses and high luminescent coupling [6][7][8][9]. GaAs multijunction (MJ) LPCs exhibited the highest conversion efficiency exceeding 60% at 300K and even reaching 72% at 15K [6,10].…”

Thickness Effect on the Solid-State Reaction of a Ni/GaAs System

“…InGaAs MOSFETs were recently shown exhibiting a promising mobility of 1100 cm 2 /V·s, significantly higher than that of state-of-the-art Si MOSFETs [ 19 ]. Furthermore, InGaAs offers high data rate transfer and high performance communication for photonic application [ 20 ] and is particularly appealing for photovoltaic applications, as it can theoretically provide a maximum efficiency of 49% [ 21 ]. However, to achieve a fully functional device, it is crucial to improve the metal/semiconductor contact issues.…”