High-efficiency blue and green laser diodes for laser displays

Nakatsu, Yoshitaka; Nagao, Yoji; Kozuru, Kazuma; Hirao, T.; Okahisa, Eiichiro; Masui, Shingo; Yanamoto, Tomoya; Nagahama, Shin–ichi

doi:10.1117/12.2505309

Cited by 36 publications

(26 citation statements)

References 8 publications

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“…Follow up of this work led to the development of a 455 nm blue LD with an output power of 5.34 W and a WPE of 43.4% under CW operation [191]. More recently, state-of-the-art blue LDs with an output power of 5.67 W with a peak WPE of 49.1% have been reported under CW operation [192]. Gradual improvement of the WPE of some of the best performing blue laser diodes is shown in Figure 9a.…”

Section: Performance Enhancement Of Blue Laser Diodesmentioning

confidence: 96%

“…These studies suggest a direct correlation between the degradation rate and the defect density of nitride LDs. [191,192,195,196]); (b) comparison of threshold current density of typical high-performance nitride lasers spanning from UV to green emission region of the spectrum (plotted based on results published in [197,198]).…”

Section: Performance Enhancement Of Blue Laser Diodesmentioning

confidence: 99%

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III-Nitride Light-Emitting Devices

et al. 2021

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III-nitride light-emitting devices have been subjects of intense research for the last several decades owing to the versatility of their applications for fundamental research, as well as their widespread commercial utilization. Nitride light-emitters in the form of light-emitting diodes (LEDs) and lasers have made remarkable progress in recent years, especially in the form of blue LEDs and lasers. However, to further extend the scope of these devices, both below and above the blue emission region of the electromagnetic spectrum, and also to expand their range of practical applications, a number of issues and challenges related to the growth of materials, device design, and fabrication need to be overcome. This review provides a detailed overview of nitride-based LEDs and lasers, starting from their early days of development to the present state-of-the-art light-emitting devices. Besides delineating the scientific and engineering milestones achieved in the path towards the development of the highly matured blue LEDs and lasers, this review provides a sketch of the prevailing challenges associated with the development of long-wavelength, as well as ultraviolet nitride LEDs and lasers. In addition to these, recent progress and future challenges related to the development of next-generation nitride emitters, which include exciton-polariton lasers, spin-LEDs and lasers, and nanostructured emitters based on nanowires and quantum dots, have also been elucidated in this review. The review concludes by touching on the more recent topic of hexagonal boron nitride-based light-emitting devices, which have already shown significant promise as deep ultraviolet and single-photon emitters.

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Section: Performance Enhancement Of Blue Laser Diodesmentioning

confidence: 96%

Section: Performance Enhancement Of Blue Laser Diodesmentioning

confidence: 99%

III-Nitride Light-Emitting Devices

et al. 2021

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“…25 Today the output power of blue LDs is already up to more than 5 W with a much longer lifetime. 18,26 However, the challenges of fabricating longer wavelength GaN-based LDs are numerous and become more severe as the laser wavelength increases, which means that it is more difficult to manufacture high power GaN-based green LDs than blue LDs. 15,[27][28][29] The peak gain of GaNbased LDs decreases as the emission wavelength increases from violet to green range, which will result of the much lower efficiency of the green LDs than that of blue LDs.…”

Section: Blue-green Laser Diodementioning

confidence: 99%

“…As the power of blue-green LDs gradually increases, they can be widely used in displays, lighting, quantum technology, materials processing, and so forth. 26,35,36 The large market demand will also further promote the development of GaN-based LDs.…”

Section: Blue-green Laser Diodementioning

confidence: 99%

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Review of laser‐diode pumped Ti:sapphire laser

Liu

Sun

Zheng

et al. 2021

Micro & Optical Tech Letters

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Ti:sapphire laser has an important position in ultrashort pulse generation and wavelength tuning. The use of expensive frequency-doubled diode-pumped solid-state laser as the pump source limits the promotion of its application to a certain extent. With the maturity of high-power bluegreen laser diodes (LDs), low-cost LD directly pumped Ti: sapphire laser becomes possible. After more than 10 years of development, the output parameters of LD pumped Ti: sapphire lasers have been greatly improved. Moreover, the lasers have been applied to optical frequency combs, multiphoton microscopy imaging, and so forth, both of which have achieved impressive results.

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Demonstration of Electrically Injected Semipolar Laser Diodes Grown on Low-Cost and Scalable Sapphire Substrates

Khoury

Zhang

et al. 2019

ACS Appl. Mater. Interfaces

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The last two decades have shown an increasing need for GaN-based laser diodes (LDs), which are currently only grown on bulk GaN substrates, which remain to date very expensive and/or only available in small sizes. The ever growing laser market will expand in the coming years, thanks to the development of automotive laser lighting, high-speed Li-Fi optical data transmission, LiDAR sensing for autonomous vehicles and smart cities, head-up displays, and AR/VR systems, in addition to biomedical and further industrial applications. These emerging technologies demand for mass-production of GaN-based lasers to be produced on large-size, low-cost, and industrially compatible substrates. To address this issue, we demonstrate the first electrically injected semipolar 440 nm LD on high-quality and low-defect-density (11−22) GaN templates grown on scalable and low-cost sapphire substrates. The LDs exhibit a threshold current density of 17 kA/cm 2 , a single facet output power of more than 200 mW at 2 A with a slope efficiency of 0.85 W/A, and a TE polarization having a ratio of 97.6%. These results enable the advancement of ultra-low-cost LDs while benefiting from the inherent advantages of semipolar GaN properties.

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High-efficiency blue and green laser diodes for laser displays

Cited by 36 publications

References 8 publications

III-Nitride Light-Emitting Devices

III-Nitride Light-Emitting Devices

Review of laser‐diode pumped Ti:sapphire laser

Demonstration of Electrically Injected Semipolar Laser Diodes Grown on Low-Cost and Scalable Sapphire Substrates

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