The Conference Record of the Twenty-Second IEEE Photovoltaic Specialists Conference - 1991
DOI: 10.1109/pvsc.1991.169196
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High-efficiency GaAs solar cells grown on passive-Ge substrates by atmospheric pressure OMVPE

J.C. Chen1,
M.L. Ristow2,
J. I. Cubbage3
et al.

Abstract: High efficiency (up to 19%, AMO) GaAs solar cells on passive-Ge substrates have been grown by an atmospheric pressure OMVPE. A systematic study was carried out to find the optimum growth conditions. Results indicate that only a narrow temperature window ( 600-630°C) for the initial layer growth will give the passive-Ge junction together with good GaAs solar cells.

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