High-efficiency InAs/GaAs quantum dot intermediate band solar cell achieved through current constraint engineering

Sogabe, Tomah; Yoshida, Shoji; Miyashita, Naoya; Farrell, Daniel; Shiba, Kodai; Hong, Hwen‐Fen; Okada, Yoshitaka

doi:10.1016/j.nxmate.2023.100013

Cited by 3 publications

(1 citation statement)

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“…We must note here that although the device performance presents similar feature as the device operation under detailed balance principle, all the conversion efficiencies simulated under drift--diffusion model are found dramatically lower than the maximum theoretical efficiency simulated under detailed balance principle. On the other hand, the simulated efficiency efficiencies η which are ∼32% at 1 sun and ∼39% under 1,000 suns are still higher than the experimentally reported results of InAs/GaAs QD IBSC, indicating a lot of rooms to improve in the future experimental work [11,23]. At last, it is worth mentioning that when using the stratified IB continuity in our simulations, the efficiency obtained is comparable to that achieved using a hybridized detailed balance model and drift-diffusion models, as shown in literature [20].…”

Section: Current-voltage Characteristics and Light Concentrationmentioning

confidence: 75%

Drift–Diffusion Simulation of Intermediate Band Solar Cell: Effect of Intermediate Band Continuity Constraint

Shiba,

Okada,

Sogabe

2023

Journal of Nanomaterials

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Self-consistent drift–diffusion model has been widely employed to simulate the device performance of intermediate band solar cell (IBSC) under practical device configuration. However, one of the remained issues in the drift–diffusion modeled-based works is the difficulty to reach the IB carrier continuity through the self-consistent manner. In most of the previous reports the constraints were relaxed or just partially satisfied; which render the unreliable performance results and misguide the device design strategy. In this work, in order to solve this issue and to validate our results, we performed extensive simulations to fully disclose the significant effect of the IB continuity constraints by taking InAs/GaAs quantum dot-based IBSC as a model device using the semiconductor modules in COMSOL Multiphysics combined with the Fortran codes. We found that under rigorous satisfaction of IB continuity constraint, the band potential profiles for the IBSC with either doped or nondoped IB under various light illumination conditions are nearly identical to those under the dark conditions. Moreover, from the simulated current–voltage curve dependence on the light concentration ratio, we found the device performance based on drift–diffusion under rigorous IB continuity constraint showed similar tendency to the features simulated based on detailed balance principle except the much-lowered power conversion efficiency. Our work demonstrated here, serves as an accurate and reliable IBSC device design approach toward better IB material screening, efficiency improvement, optical management, and extended application in the emerging field such as the perovskite material-based IBSC.

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Section: Current-voltage Characteristics and Light Concentrationmentioning

confidence: 75%