High extinction ratio and low transmission loss thin-film terahertz polarizer with a tunable bilayer metal wire-grid structure

Huang, Zhe; Parrott, Edward P. J.; Park, Hong-Kyu; Chan, Hau Ping; Pickwell‐MacPherson, Emma

doi:10.1364/ol.39.000793

Cited by 54 publications

(29 citation statements)

References 24 publications

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“…16,17 Currently, THz-TDS lacks many affordable optical devices and materials, such as polarizers, 18,19 waveplates, 20 and filters, 21 resulting in research groups putting effort into their development. Among them, a tunable dual band terahertz band-pass filter, and a band stop filter have been fabricated using VO 2 22 and Si 23 metamaterials, respectively.…”

Section: Introductionmentioning

confidence: 99%

Solvent Doping of PEDOT/PSS: Effect on Terahertz Optoelectronic Properties and Utilization in Terahertz Devices

et al. 2015

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Poly(3,4-ethylenedioxythiophene)/poly(4-styrenesulfonate) (PEDOT/PSS) is a conducting polymer and is a promising material for use in optoelectronic devices. Adding dopants to PEDOT/PSS significantly affects its optoelectronic properties: in this article we use terahertz time domain spectroscopy (THz-TDS) to probe the effects of dopants dimethyl sulfoxide (DMSO) and ethylene glycol. The carrier density, mobility, and conductivity are calculated from the THz measurements by fitting the dielectric permittivity to the Drude−Smith model. This gives us an insight into the conductivity enhancement mechanisms, and we find evidence to suggest that both carrier delocalization and charge screening play a role, although the relative importance of these two mechanisms depends upon both dopant polarity and concentration. To demonstrate an application of this finding, we design and fabricate broadband terahertz neutral density filters based upon 6% DMSO doped PEDOT/PSS thin films of varying thickness and demonstrate optical densities between 0.14 and 0.53 from 0.5 to 2.2 THz with a comparable frequency variation to commercially available optical frequency ND filters.

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Section: Introductionmentioning

confidence: 99%

Solvent Doping of PEDOT/PSS: Effect on Terahertz Optoelectronic Properties and Utilization in Terahertz Devices

et al. 2015

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“…The THz beam was manipulated by four TPX lenses and focused onto the Si-VO 2 interface. Three wire-grid polarizers were used in this system, with polarizers 1 and 3 being the thin-film bi-layer polarizers made by Huang et al 10 and polarizer 2 from Microtech Instruments. Polarizer 1 was used to linearly filter the incident light into a desired direction.…”

Section: Device Fabrication and System Establishmentmentioning

confidence: 99%

Invited Article: An active terahertz polarization converter employing vanadium dioxide and a metal wire grating in total internal reflection geometry

et al. 2018

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Active broadband terahertz (THz) polarization manipulation devices are challenging to realize, but also of great demand in broadband terahertz systems. Vanadium dioxide (VO2) shows a promising phase transition for active control of THz waves and provides broadband polarization characteristics when integrated within grating-type structures. We creatively combine a VO2-based grating structure with a total internal reflection (TIR) geometry providing a novel interaction mechanism between the electromagnetic waves and the device, to realize a powerful active broadband THz polarization-controlling device. The device is based on a Si-substrate coated with a VO2 layer and a metal grating structure on top, attached to a prism for generating the TIR condition on the Si-VO2-grating interface. The grating is connected to electrodes for electrically switching the VO2 between its insulating and conducting phases. By properly selecting the incident angle of the THz waves, the grating direction, and the incident polarization state, we first achieved a broadband intensity modulator under a fused silica prism with an average modulation depth of 99.75% in the 0.2-1.1 THz region. Additionally, we realized an active ultra-broadband quarter-wave converter under a Si prism that can be switched between a 45° linear rotator and a quarter wave converter in the 0.8-1.5 THz region. This is the first demonstration of an active quarter-wave converter with ultra-broad bandwidth performance. Our work shows a highly flexible and multifunctional polarization-controlling device for broadband THz applications.

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“…As an essential part of a terahertz wave system, terahertz wave manipulation is highly required. Different functional THz devices have been reported, such as modulator [1], filters [2,3], switches [4][5][6], phase shifters [7], polarizers [8], absorbers [9,10], and splitters [11][12][13]. We all know that terahertz wave filter is a kind of important signal processing device [14][15][16].…”

Section: Introductionmentioning

confidence: 99%

Terahertz Transmission Characteristics of Free-Standing Fractal Jesus-Cross Structure

Xiong

2020

Front. Phys.

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We have fabricated a Jesus-cross structure on aluminum foil using the femtosecond laser technique. Using the terahertz time-domain spectroscopy (THz-TDS) system, the transmission properties of free-standing double-layer crossing fractal structure are tested. The parameters of the proposed structure were optimized using the finite element frequency domain technology of commercial software CST Microwave Studio package. The dimensions of the aluminum foil periodically patterned with crossing fractal structure are 1.5 × 1.5 cm 2 . The resonant frequencies of the proposed structure are 0.216 and 0.735 THz with 3-dB bandwidths of 62 and 15 GHz, respectively. The transmission ratio can reach to 0.89 and 0.57. It indicates the structure having dual-band filtering performance. This work has the potential to open a new avenue as a filter working for free-space terahertz radiation.

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High extinction ratio and low transmission loss thin-film terahertz polarizer with a tunable bilayer metal wire-grid structure

Cited by 54 publications

References 24 publications

Solvent Doping of PEDOT/PSS: Effect on Terahertz Optoelectronic Properties and Utilization in Terahertz Devices

Solvent Doping of PEDOT/PSS: Effect on Terahertz Optoelectronic Properties and Utilization in Terahertz Devices

Invited Article: An active terahertz polarization converter employing vanadium dioxide and a metal wire grating in total internal reflection geometry

Terahertz Transmission Characteristics of Free-Standing Fractal Jesus-Cross Structure

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