High Gain More Stable Self Biased Two Stage Differential Amplifier for Bio-signal Processing

Kumar, Pattem Sampath; Ch, Vijayalakshmi; Thouti, Swapna; Kumar, G. Prasanna; Rajeswaran, N.

doi:10.1109/icaccs57279.2023.10112830

Cited by 1 publication

(2 citation statements)

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“…The wise use of this mutual coupling allows for increasing the directive properties of the array, absorbing the impedance variations of the antenna by the connected LNA [21,22]. The work developed in [22][23][24][25][26][27], on the development of dual single-ended and differential structures, has given rise to active balanced feeding networks for the SKA array.…”

Section: Introductionmentioning

confidence: 99%

“…This means that current baluns seek to have low losses, be broadband, have low noise, and, in many cases, be active [22]. Furthermore, the differential architecture is effective in RF/MW front ends, thanks to the local oscillator (LO) leakage cancellation [26,27,33] that these topologies provide. However, filters at very high frequencies are one of the most difficult components to realize in MMIC when working with differential architectures.…”

Section: Introductionmentioning

confidence: 99%

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Differential BroadBand (1–16 GHz) MMIC GaAs mHEMT Low-Noise Amplifier for Radio Astronomy Applications and Sensing

Jimenez-Martin,

Gonzalez-Posadas,

Parra-Cerrada

et al. 2024

Sensors

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A broadband differential-MMIC low-noise amplifier (DLNA) using metamorphic high-electron-mobility transistors of 70 nm in Gallium Arsenide (70 nm GaAs mHEMT technology) is presented. The design and results of the performance measurements of the DLNA in the frequency band from 1 to 16 GHz are shown, with a high dynamic range, and a noise figure (NF) below 1.3 dB is obtained. In this work, two low-noise amplifiers (LNAs) were designed and manufactured in the OMMIC foundry: a dual LNA, which we call balanced, and a differential LNA, which we call DLNA. However, the paper focuses primarily on DLNA because of its differential architecture. Both use a 70 nm GaAs mHEMT space-qualified technology with a cutoff frequency of 300 GHz. With a low power bias Vbias/Ibias (5 V/40.5 mA), NF < 1.07 dB “on wafer” was achieved, from 2 to 16 GHz; while with the measurements made “on jig”, NF = 1.1 dB, from 1 to 10 GHz. Furthermore, it was obtained that NF < 1.5 dB, from 1 to 16 GHz, with a figure of merit equal to 145.5 GHz/mW. Finally, with the proposed topology, several LNAs were designed and manufactured, both in the OMMIC process and in other foundries with other processes, such as UMS. The experimental results showed that the NF of the DLNA MMIC with multioctave bandwidth that was built in the frequency range of the L-, S-, C-, and X-bands was satisfactory.

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