Electron. Lett.
 1995
DOI: 10.1049/el:19950904
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High-low doped power MESFET with 32.0 dBm outputpowerfor 3.0 V digital/analogue dual-mode hand-held telephones

J.-L. Lee
1
,
Jae‐Kyoung Mun
2
,
H. Kim
3
et al.
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