High-mobility amorphous In2O3–10wt%ZnO thin film transistors

Yağlıoğlu, Burağ; Yeom, Hyo‐Young; Beresford, R.; Paine, David C.

doi:10.1063/1.2335372

Cited by 214 publications

(127 citation statements)

References 7 publications

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“…Combinatorial approaches have been employed to screen multi-component AOS systems, including the In-Ga-Zn-O system [49] and Zn-Sn-O (ZTO) system [50]. Other materials, such as a-In-Zn-O (a-IZO) [51], a-In-Ga-O (a-IGO) [14] and a-Ga-Sn-Zn-O (a-GTZO) [52], have also been reported. Th ese materials include the constituent elements of transparent conducting oxides, such as indium, zinc and tin as major constituents.…”

Section: Materials and Processesmentioning

confidence: 99%

Material characteristics and applications of transparent amorphous oxide semiconductors

2010

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A morphous semiconductors have created a new area of electronics known as 'giant microelectronics' typifi ed by devices such as solar cells and active-matrix (AM) fl at-panel displays. Single-crystalline semiconductor technology, typifi ed by crystal silicon electronics, is unsuitable for such applications, whereas amorphous or polycrystalline fi lms can be easily formed over large areas of greater than 1 m 2 at low temperature (e.g. < 400 °C) on both glass and plastic substrates, facilitating these new applications. Due to carrier scattering and trapping at defects on grain boundaries in polycrystalline materials (the grain boundary problem), hydrogenated amorphous silicon (a-Si:H) has been used more widely than polycrystalline silicon (p-Si) for practical large-size applications. However, the critical obstacles to be overcome to realize a-Si:H in future applications are low mobility (< 1 cm 2 /V s) and instability against electric stress and photo-illumination.In late 2004, we reported that an amorphous oxide semiconductor (AOS) with the composition a-InGaZnO 4 (a-IGZO) can be applied in the fabrication of fl exible, transparent thin-fi lm transistors (TFTs) having much improved performance compared to conventional TFTs based on a-Si:H and organic materials [1]. AOS materials have superior characteristics to conventional semiconductors, and therefore AOS TFT technology has grown very rapidly toward the realization of TFT backplanes for next-generation flat-panel displays. As summarized in Figure 1, a variety of prototype AM displays have been demonstrated by several companies within the last fi ve years since the fi rst report of AOS TFTs. Herein, we review the unique characteristics of AOS materials in relation to their TFT characteristics, and discuss why AOSs have such attractive electrical properties related to the electronic structures specifi c to transparent oxides. Active-matrix displays and circuits based on AOS TFT arraysTh e fi rst AOS-TFT was reported in late 2004 (see Figure 1). Just one year later, Toppan Printing quickly followed with the fi rst AM display based on AOS as a fl exible black-and-white electronic paper (e-paper) using a-IGZO TFTs

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Section: Materials and Processesmentioning

confidence: 99%

Material characteristics and applications of transparent amorphous oxide semiconductors

2010

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“…Amorphous oxide semiconductors such as In-Ga-Zn-O, [1][2][3][4] In-Zn-O, 5,6 Zn-Sn-O, [7][8][9][10] In-Sn-O, 11 and In-Zn-Sn-O 12,13 have attracted considerable attention as channel materials for next-generation thin-film transistors (TFTs). Compared with crystalline materials, amorphous oxide materials have advantages because of their low processing temperatures and uniformity of device characteristics.…”

Section: Introductionmentioning

confidence: 99%

Impact of UV/O3 treatment on solution-processed amorphous InGaZnO4 thin-film transistors

Umeda

Miyasako

Sugiyama

et al. 2013

Journal of Applied Physics

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Ultraviolet–ozone (UV/O3) treatment was adopted to the fabrication of solution-processed amorphous In–Ga–Zn–O thin-film transistors (TFTs), with metal composition of In:Ga:Zn = 1:1:1 represented by InGaZnO4. By applying UV/O3 treatment In–Ga–Zn–O gel films, their condensation was notably enhanced through decomposition of organic- and hydrogen-based elements, which drastically improved the quality of the amorphous InGaZnO4 films. As a result, high TFT performance, with values of on/off ratio, 108; subthreshold swing, 150 mV/decade; threshold voltage, 9.2 V; and field-effect mobility, 5.1 cm2 V−1 s−1, was achieved.

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“…However, the property of IZO thin film is unstable such that postdeposition annealing of the active layer is inevitable in a-IZO TFT fabrication. Although the characteristics of oxide TFTs have recently been explored, a detailed study of their properties in relation to post-deposition annealing conditions and chemical composition has not been reported from the viewpoint of semiconductor materials (15)(16)(17). This study reports the post-deposition annealing effects on a-IZO TFTs and discusses the chemical composition of the IZO thin film.…”

Section: Motivationmentioning

confidence: 99%

Effects of Post-Deposition Annealing Atmosphere and Duration on Sol-Gel Derived Amorphous Indium-Zinc-Oxide Thin-Film Transistors

Chung¹,

Chang

Li³

et al. 2011

ECS Trans.

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This work shows the effects of post-deposition annealing atmosphere and duration on the properties of sol-gel derived amorphous indium zinc oxide thin film transistors (a-IZO TFTs). Two different post-deposition annealing atmospheres, nitrogen and oxygen, were used in this study. Experimental results showed that the O 2 -annealed devices showed better electrical characteristics than the N 2 -annealed samples. Under O 2 -annealing, field effect mobility was enhanced to 1.47 cm 2 /V s, the threshold voltage increased to -4.61 V and the subthreshold swing improved to 0.86 V/dec. Also, the transfer characteristics of a-IZO TFTs improve with annealing time. X-ray photoelectron spectroscopy (XPS) analysis indicated that the chemical composition of the IZO film was modified by the oxygen annealing.

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High-mobility amorphous In2O3–10wt%ZnO thin film transistors

Cited by 214 publications

References 7 publications

Material characteristics and applications of transparent amorphous oxide semiconductors

Material characteristics and applications of transparent amorphous oxide semiconductors

Impact of UV/O3 treatment on solution-processed amorphous InGaZnO4 thin-film transistors

Effects of Post-Deposition Annealing Atmosphere and Duration on Sol-Gel Derived Amorphous Indium-Zinc-Oxide Thin-Film Transistors

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