High Mobility Channels for Ultimate CMOS

Abstract

Integration of Ge as the p-FET channel material for 22 nm and beyond technology nodes is receiving increasing attention. Furthermore, there is a growing consensus in the CMOS industry that III-Vs channels for n-FETs should be closely evaluated. This review examines choices for Ge integration with Si, and describes recent results from III-V channels with a high- k/metal gate stack.