High performance 1.55 µm polarisation-insensitive semiconductor optical amplifier based on low-tensile-strained bulk GaInAsP

Photonic Integrated Semiconductor Optical Amplifier Switch Circuits

“…The latter are tailored using epitaxially defined strain. A broad range of reports have demonstrated polarisation independent operation for both bulk (Emery et al, 1997;Dreyer et al, 2002;Morito et al, 2000;Kakitsuka et al, 2000;Morito et al, 2003;Morito et al, 2005) and quantum wells SOAs (Godefroy et al, 1995;Kelly et al, 1997;Ougazzadeu, 1995;Tiemeijer et al, 1996).…”

Slow and fast light in quantum dot based semiconductor optical amplifiers

“…The lengths of the devices are 1 mm and 2 mm for the bulk [35] and QDashes, respectively. The current is adjusted to obtain the maximum gain for each amplifier.…”

Semiconductor optical amplifiers: performance and applications in optical packet switching [Invited]

“…The use of lateral [5][6][7] or vertical [8] tapering of the active region allows a different confinement factor in the middle of the device while maintaining an optimum output mode. In some designs the active waveguide taper is augmented by an underlying passive waveguide to expand the mode further [5,9,10]. For dilute mode designs [11,12], the waveguide is invariant along the length of the SOA and typically consists of a wide ( ~ 3 μm), thin ( ~ 0.05 μm) active layer.…”

“…Generally the preferred means for reducing the polarization dependence requires the introduction of a tensile strain in a bulk active region [5][6][7]11]. The TE waveguide mode has a higher confinement factor than the TM mode, but tensile strain makes the TM material gain higher than that of TE.…”