High Performance Amorphous IGZO Thin-Film Transistor Based on Alumina Ceramic

Abstract

Ceramic materials are high-temperature resistant materials with promising prospects. In some applications, semiconductor devices need to be integrated with a ceramic substrate. Herein, we report on the stable operation of an Al 2 O 3 ceramic-based amorphous-Indium gallium zinc oxide (a-IGZO) thinfilm transistor (TFT) at room temperature up to 523 K. Scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) were used to characterize the a-IGZO film. A mixed solution was printed on the surface of an insulating layer of alumina. After the combustion reaction, the metal electrode was printed on the surface of a-IGZO to obtain a TFT. The I ON /I OFF ratio was 6.04 × 10 6 at 293 K, and it was maintained at 1.44 × 10 5 at 523 K. It was demonstrated that the parameters of a-IGZO TFTs such as the subthreshold swing (SS), g m and µ sat changed at different temperatures. As such, they can be used as building blocks for integrated circuits that can operate at high temperatures. The fabrication of TFT-based inverters, NAND and NOR gate circuits facilitate the exploration of the possibility of more complex digital circuits that operate at high temperatures, based on hybrid circuit design.INDEX TERMS Al 2 O 3 ceramic, a-IGZO, TFT, high temperature.

The First Step towards a R2R Printing Foundry via a Complementary Design Rule in Physical Dimension for Fabricating Flexible 4‐Bit Code Generator

“…The mobility (μ) was calculated from the maximum transconductance (μ FE = 2L(g m ) 2 /WCi), where Ci and g m are the gate capacitance per unit and trans-conductance, respectively. [26] From the capacitance-voltage measurement, we confirmed a capacitance of 9 ±2 nF cm −2 for printed dielectric layers, almost same capacitances from the previously printed ring oscillators ( Figure S5, Supporting Information). For the ring oscillator in the 4-bit code generator, printed p-type SWNTs-TFTs had a mobility of 0.07 ± 0.02 cm 2 V −1 s −1 , V th of 10 ± 1.2 V and I on /I off ratio of 300 ± 10, while the printed n-type SWNTs-TFTs had a mobility of 0.06 ± 0.02 cm 2 V −1 s −1 , V th of −14 ± 2.7 V and I on /I off ratio of 33 ± 2, as shown Figure 4d.…”

Highly Sensitive Oxygen Sensing Characteristics Observed in IGZO Based Gasistor in a Mixed Gas Ambient at Room Temperature

“…These results are consistent with the data reported in papers on the resistive switching memory of IGZO. 31,32 Figure S4F illustrates the XPS results of the IGZO gasistor after reaction with the O 2 gas, which represents that the area integral percentage of O II is decreased, compared to the LRS, but it is higher than the area integral percentage of O I for the HRS. Therefore, it was discovered that the CFs within the as-deposited IGZO were formed by the generation of V o 2+ , and the CFs that consist of V o 2+ were disrupted by the reaction with adsorbed O 2 gas due to the decrease of area integral percentage of O II , as shown in Figure S4G.…”

Simulating the I‐V characteristics of an ultrathin IGZO‐based thin film transistor using finite element method

“…Regardless of the much higher drain current, a-IGZO TFTs is mostly used in the electronics industry due to its low temperature, simple deposition either on glass or flexible substrate compared to a-Si. 6,[29][30][31][32][34][35][36]38,43 Additionally, a-IGZO TFTs recorded better performance than Si-based TFTs, in-terms of SS as well as I on/off (Table 3). Alternatively, traditional Si-based TFT 11 has recorded limitations concerning the sophisticated fabrication process.…”

“…22 Amorphous-IGZO (a-IGZO) TFTs are considered in the literature as the most suitable TFTs for IC design. 30 IGZO-based TFTs have been integrated in displays, touch-sensors, and CMOS image sensors, 31,32 due to its high current driving capability, low required deposition temperature, and low fabrication cost. 29 Additionally, a-IGZO TFTs become widely used in display applications replacing amorphous silicon (a-Si) TFTs, 33 as they have a higher optical transparency, smoother surface and a better environment stability than to a-Si TFT.…”