High-performance and low-consumption 10 Gb/s GaAs PHEMT driver for external modulation transmitter

Demange, Dominique; Billard, M.; Devaux, F.; Lefevre, R.

doi:10.1109/68.508727

Cited by 6 publications

(3 citation statements)

References 5 publications

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“…Several HEMT driver IC's for 10 Gb/s have been reported, and the corresponding device characteristics are given [2][3][4][5]. To test the validity of our calculated method, we have compared calculated results with experimental data in Table 2.…”

Section: Resultsmentioning

confidence: 80%

“…Low dissipative losses and the possibility to incorporate a low noise amplifier, together with a superconducting filter inside a cryocooler, allow reduction of the overall receiver system noise figure by approximately 2 dB [1]. As a result of these characteristics, the radio coverage of a base transceiver station will be increased with consequent reduction of their number and relative costs to secure radio coverage of a given area [5]. Furthermore, HTS filters improve selectivity and out-of-band rejection.…”

Section: Introductionmentioning

confidence: 99%

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Model device parameters for a 10‐Gb/s HEMT modulator driver IC

Gao

Pan

et al. 2002

Micro & Optical Tech Letters

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This paper presents research on device parameters for a 2.5–10‐Gb/s high electron mobility transistor (HEMT) modulator driver IC. The effect of DC and capacitance parameters on the driver IC is discussed, and their ability to meet the requirements of the driver IC are calculated. The results shown agree with experimental data. © 2002 Wiley Periodicals, Inc. Microwave Opt Technol Lett 35: 357–360, 2002; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.10606

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Section: Resultsmentioning

confidence: 80%

Section: Introductionmentioning

confidence: 99%

Model device parameters for a 10‐Gb/s HEMT modulator driver IC

Gao

Pan

et al. 2002

Micro & Optical Tech Letters

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“…An on chip inductor matches the input of the TIA to the photodetector capacitance. The input stage use the E-mode transistors for their low power consumption, high ft and Laser Driver-modulators (LDR) at 2.5 Gb/s and 10 Gb/s have also been designed and manufactured using the same process [3], [4].…”

Section: Low Noise Transimpedance Amplifiers and Driver Modulators Fomentioning

confidence: 99%

<title>Unified low-noise technology for gigahertz and gigabit telecommunications systems</title>

Smith

Rocchi

1999

SPIE Proceedings

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This paper describes the use of an Enhancement-Depletion Mode process in Low Noise applications as well as high speed interfacing for optical networks. The same technology has also been used for highly linear, very low noise, LNAs at Lband, in down converters as well as drivers for 10 Gb/s interfaces, hence is a "Unified" process capable of performing well in many different applications.The technology will be briefly described, some of the advantages of the E-mode PET over the D-mode FET discussed and examples of circuits are presented.

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Semiconductor Laser and Modulator Driver Circuit Design

Gao

2010

Optoelectronic Integrated Circuit Design and Device Modeling

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High-performance and low-consumption 10 Gb/s GaAs PHEMT driver for external modulation transmitter

Cited by 6 publications

References 5 publications

Model device parameters for a 10‐Gb/s HEMT modulator driver IC

Model device parameters for a 10‐Gb/s HEMT modulator driver IC

<title>Unified low-noise technology for gigahertz and gigabit telecommunications systems</title>

Semiconductor Laser and Modulator Driver Circuit Design

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