High-performance and low-power consumption deep UV photodetectors based on MOCVD-grown ZnGaO epilayers with high temperature functionality

Khan, Taslim; Sheoran, Hardhyan; Tarntair, Fu-Gow; Horng, Ray-Hua; Singh, Rajendra

doi:10.1016/j.mssp.2024.108418

Materials Science in Semiconductor Processing

2024

DOI: 10.1016/j.mssp.2024.108418

|View full text |Cite

High-performance and low-power consumption deep UV photodetectors based on MOCVD-grown ZnGaO epilayers with high temperature functionality

Taslim Khan,

Hardhyan Sheoran,

Fu-Gow Tarntair

et al.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2024

2025

Publication Types

Select...

Article5

Relationship

Self Cite0

Independent5

Authors

Journals

Cited by 5 publications

References 30 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

Enhanced Performance of Self‐Powered γ‐Ray Irradiated MSM Deep UV Photodetector Based on MOCVD‐Grown ZnGa₂O₄ for Space Exploration

Khan,

Aggarwal,

Tarntair

et al. 2024

Adv Materials Technologies

View full text Add to dashboard Cite

The utilization of device for the space explorations, the active material of the device must show resilience toward cosmos radiation. In this work, the radiation hardness of ZnGa2O4‐based deep ultra‐violet (DUV) photodetectors (PDs) is examined using γ‐ray irradiation. Responsivity of the photodetector at zero bias is found to improve from 0.98 to 1.94 mA W−1, the dark current increased from 0.11 to 5.6 pA, while photo‐to‐dark current ratio (PDCR) increased the from 3.2 × 103 to 3.1 × 104 and the photocurrent decay time improved from 220 to 190 ms. The high‐resolution X‐ray photoelectron spectra (HR‐XPS) of O 1s core level peak is deconvoluted into two main peaks namely, O(I) and O(II), where the lattice oxygen of ZnGa2O4 is identified by the O(I) peak, while its surface oxygen defect is represented by O(II). A clear increment is observed in the percentage of oxygen defect peak, O(II), from 6.82 to 53.19% after 200 kGy. Also, the device remains undeteriorated after 200 kGy irradiation, indicating it to be a radiation‐hard device. These characteristics allow ZnGa2O4 DUV PDs to function effectively in cosmic radiation environments with the capability to operate on zero‐bias, regardless of the γ‐radiation.

show abstract

Enhanced Performance of Self‐Powered γ‐Ray Irradiated MSM Deep UV Photodetector Based on MOCVD‐Grown ZnGa₂O₄ for Space Exploration

Khan,

Aggarwal,

Tarntair

et al. 2024

Adv Materials Technologies

View full text Add to dashboard Cite

show abstract

Tailoring crystallographic-orientation of one-dimensional CsCu2I3 single crystal wires towards enhanced solar-blind photodetection

Liu,

Yin,

Liu

et al. 2025

Journal of Alloys and Compounds

View full text Add to dashboard Cite

Quasi-dry layer transfer of few-layer MBE-grown MoTe2 sheets for optoelectronic applications

Chaudhary,

Khan,

Bhatt

et al. 2024

Sensors and Actuators A: Physical

View full text Add to dashboard Cite

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

High-performance and low-power consumption deep UV photodetectors based on MOCVD-grown ZnGaO epilayers with high temperature functionality

Cited by 5 publications

References 30 publications

Enhanced Performance of Self‐Powered γ‐Ray Irradiated MSM Deep UV Photodetector Based on MOCVD‐Grown ZnGa₂O₄ for Space Exploration

Enhanced Performance of Self‐Powered γ‐Ray Irradiated MSM Deep UV Photodetector Based on MOCVD‐Grown ZnGa₂O₄ for Space Exploration

Tailoring crystallographic-orientation of one-dimensional CsCu2I3 single crystal wires towards enhanced solar-blind photodetection

Quasi-dry layer transfer of few-layer MBE-grown MoTe2 sheets for optoelectronic applications

Contact Info

Product

Resources

About

High-performance and low-power consumption deep UV photodetectors based on MOCVD-grown ZnGaO epilayers with high temperature functionality

Cited by 5 publications

References 30 publications

Enhanced Performance of Self‐Powered γ‐Ray Irradiated MSM Deep UV Photodetector Based on MOCVD‐Grown ZnGa2O4 for Space Exploration

Enhanced Performance of Self‐Powered γ‐Ray Irradiated MSM Deep UV Photodetector Based on MOCVD‐Grown ZnGa2O4 for Space Exploration

Tailoring crystallographic-orientation of one-dimensional CsCu2I3 single crystal wires towards enhanced solar-blind photodetection

Quasi-dry layer transfer of few-layer MBE-grown MoTe2 sheets for optoelectronic applications

Contact Info

Product

Resources

About

Enhanced Performance of Self‐Powered γ‐Ray Irradiated MSM Deep UV Photodetector Based on MOCVD‐Grown ZnGa₂O₄ for Space Exploration

Enhanced Performance of Self‐Powered γ‐Ray Irradiated MSM Deep UV Photodetector Based on MOCVD‐Grown ZnGa₂O₄ for Space Exploration