High-Performance and Self-Powered Deep UV Photodetectors Based on High Quality 2D Boron Nitride Nanosheets

Aldalbahi, Ali; Rivera, Manuel; Rahaman, Mostafizur; Zhou, Andrew F.; Alzuraiqi, Waleed Mohammed; Feng, Peter

doi:10.3390/nano7120454

Cited by 30 publications

(25 citation statements)

References 62 publications

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“…Raman scattering measurements were performed at room temperature where the microscope focused the laser beam onto the surface of the sample. [31] A Raman active E2g mode of the BNNS film at ~1363 cm −1 was observed as shown in Figure 1g, indicating it is a hexagonal phase. Slightly unsymmetrical structure or profile of the spectral line likely indicates that impurities were presented in the BNNSs.…”

Section: Basic Characterization Of the 2d Bnns Materialsmentioning

confidence: 95%

“…The properties were then characterized by using room temperature micro-Raman Spectroscopy equipped with a Jobin-Yvon T64000 Triplemate system (HORIBA Scientific, Edison, NJ, USA) and a radiation of 514.5 nm from a coherent argon ion laser. A liquid nitrogen cooled charge-coupled device system was used to collect and process the scattered data [31]. Characterizations of the wettability or surface energy properties of the sensing materials were based on a water drop contact angle test.…”

Section: Methodsmentioning

confidence: 99%

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Super Stable Pollution Gas Sensor Based on Functionalized 2D Boron Nitride Nanosheet Materials for High Humidity Environments

2018

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We report on studies of new gas sensing devices to be used in high humidity environments. Highly thermal-stable, super hydrophobic 2-dimensional (2D) boron nitride nanosheets (BNNSs) functionalized with Pt nanoparticles were prepared and used as an active layer for the prototype. The morphologic surface, crystallographic structures and chemical compositions of the synthesized 2D materials were characterized by using optical microscope, scanning electron microscope (SEM), transmission electron microscope (TEM) and atomic force microscope (AFM) and Raman scattering, respectively. The experimental data reveals that high-quality BNNSs were prepared. A pair of Au electrodes were combined with a basic electrical circuit and the 2D sensing material to form high-performance gas sensors for the detection of pollution gases. The present structure is simple and the fabrication is easy and fast, which ensures the creation of a low-cost prototype with harsh (high humidity, high temperature) environment resistance and potential for miniaturization. The responses of the prototype to different target gases with different concentrations were characterized. The influences of the operating temperature and bias voltage effect on sensing performances were also investigated. The fabricated sensors appear to have high selectivity, high sensitivity and fast response to target gases. The sensing mechanism in the present case is attributed to the electron donation from the target gas molecules to the active layer, leading to the change of electrical properties on the surface of BNNS layer.

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Section: Basic Characterization Of the 2d Bnns Materialsmentioning

confidence: 95%

Section: Methodsmentioning

confidence: 99%

Super Stable Pollution Gas Sensor Based on Functionalized 2D Boron Nitride Nanosheet Materials for High Humidity Environments

2018

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“…Apart from Al x Ga 1− x N and the relative heterostructures, BN has also demonstrated great potential for solar‐blind DUV MSM photodetector application . High‐quality c‐BN films have been successfully grown in an electron‐cyclotron‐resonance microwave plasma CVD or PECVD system .…”

Section: Iii‐nitride Compoundsmentioning

confidence: 99%

Recent Progress in Solar‐Blind Deep‐Ultraviolet Photodetectors Based on Inorganic Ultrawide Bandgap Semiconductors

Xie

Tong

et al. 2019

Adv Funct Materials

410

261

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Due to its significant applications in many relevant fields, light detection in the solar-blind deep-ultraviolet (DUV) wavelength region is a subject of great interest for both scientific and industrial communities. The rapid advances in preparing high-quality ultrawide-bandgap (UWBG) semiconductors have enabled the realization of various high-performance DUV photodetectors (DUVPDs) with different geometries, which provide an avenue for circumventing numerous disadvantages in traditional DUV detectors. This article presents a comprehensive review of the applications of inorganic UWBG semiconductors for solar-blind DUV light detection in the past several decades. Different kinds of DUVPDs, which are based on varied UWBG semiconductors including Ga 2 O 3 , Mg x Zn 1−x O, III-nitride compounds (Al x Ga 1−x N/AlN and BN), diamond, etc., and operate on different working principles, are introduced and discussed systematically. Some emerging techniques to optimize device performance are addressed as well. Finally, the existing techniques are summarized and future challenges are proposed in order to shed light on development in this critical research field.with energy much higher than the semiconductor bandgap. Moreover, due to light absorption by the surface passivation layers, typically Si oxide, quantum efficiency in the DUV range is greatly reduced. The passivation layers are also easily degraded by UV illumination. Finally, for highly sensitive UV photodetection, the detectors need to be cooled to reduce dark current; the cooled detectors, however, behave like cold traps for contaminants which degrade the detectivity.In the past two decades, the emergence of UV photodetectors based on wide-bandgap (WBG) semiconductors has opened up an avenue to circumvent the above-mentioned dilemma. The WBG semiconductors such as SiC, GaN, and some group II-V compounds, typically have bandgaps exceeding ≈3.10 eV, enabling room-temperature detectors to possess fast response speed, and offering intrinsic visible-blindness (response cutoff wavelength: ≈400 nm). [14][15][16] Moreover, these semiconductors generally possess significantly higher thermal conductivity than Si, which renders them suitable for operation in harsh environments (e.g., high temperature and high power). The electron velocity of these materials at large electric fields is generally higher than that of common semiconductors, although WBG semiconductors exhibit relatively lower electron and hole mobilities. Compared with the abovementioned conventional WBG semiconductors, ultrawide-bandgap (UWBG) semiconductors, as the next generation of semiconductor materials with bandgaps significantly wider than the 3.4 eV of GaN, are particularly suitable for solar-blind DUV light detection. [17][18][19][20]

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“…The single‐crystalline boron nanosheets with high quality are prepared by a vapor‐solid process and it can realize large‐scale production. In addition, 2D boron has been combined with semiconductors to form heterojunction UV photodetector 103,104…”

Section: Materials For Heterojunction Uv Pdsmentioning

confidence: 99%

Recent Progress of Heterojunction Ultraviolet Photodetectors: Materials, Integrations, and Applications

Chen

Ouyang

Yang

et al. 2020

Adv Funct Materials

346

206

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Ultraviolet photodetectors (UV PDs) with "5S" (high sensitivity, high signal-tonoise ratio, excellent spectrum selectivity, fast speed, and great stability) have been proposed as promising optoelectronics in recent years. To realize highperformance UV PDs, heterojunctions are created to form a built-in electrical field for suppressing recombination of photogenerated carriers and promoting collection efficiency. In this progress report, the fundamental components of heterojunctions including UV response semiconductors and other materials functionalized with unique effects are discussed. Then, strategies of building PDs with lattice-matched heterojunctions, van der Waals heterostructures, and other heterojunctions are summarized. Finally, several applications based on heterojunction/heterostructure UV PDs are discussed, compromising flexible photodetectors, logic gates, and image sensors. This work draws an outline of diverse materials as well as basic assembly methods applied in heterojunction/heterostructure UV PDs, which will help to bring about new possibilities and call for more efforts to unleash the potential of heterojunctions.

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High-Performance and Self-Powered Deep UV Photodetectors Based on High Quality 2D Boron Nitride Nanosheets

Cited by 30 publications

References 62 publications

Super Stable Pollution Gas Sensor Based on Functionalized 2D Boron Nitride Nanosheet Materials for High Humidity Environments

Super Stable Pollution Gas Sensor Based on Functionalized 2D Boron Nitride Nanosheet Materials for High Humidity Environments

Recent Progress in Solar‐Blind Deep‐Ultraviolet Photodetectors Based on Inorganic Ultrawide Bandgap Semiconductors

Recent Progress of Heterojunction Ultraviolet Photodetectors: Materials, Integrations, and Applications

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