High Performance Dual Gate Blue Laser Annealed Poly-Si Thin-Film Transistor for High-Resolution Displays

Jeong, Duk Young; Billah, Mohammad Masum; Siddik, Abu Bakar; Han, Byungju; Chang, Young Jin; Jang, Jin

doi:10.1109/ted.2021.3091965

Cited by 7 publications

(1 citation statement)

References 49 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[ 10–14 ] Several TFT technologies can be used for AMOLED displays such as amorphous silicon, low‐temperature poly‐silicon, and metal‐oxide (MO) TFTs backplane. [ 2,3,5,11–17 ] Among these technologies, MO semiconductors, particularly amorphous indium‐gallium‐zinc‐oxide (a‐IGZO) TFTs with high‐ k dielectrics exhibit superior electrical and optical properties such as high optical transparency, adequate carrier mobility, low off‐state current, and especially low manufacturing cost over large substrates. [ 2,10–12,18–22 ]…”

Section: Introductionmentioning

confidence: 99%

Low Cost, Al₂O₃ and ZrAlO_x Stack Passivation by Spray Pyrolysis for Highly Stable Amorphous InGaZnO Thin‐Film Transistors

Islam

Hasan

Ali

et al. 2022

Adv Materials Inter

Self Cite

View full text Add to dashboard Cite

A stack passivation by spray pyrolysis is demonstrated for high performance and stable amorphous indium‐gallium‐zinc‐oxide (a‐IGZO) thin‐film transistors (TFTs). The device performances and stabilities of a‐IGZO TFTs are compared with single zirconium‐aluminium‐oxide (ZAO), aluminium oxide (Al2O3), and stack ZAO/Al2O3 and Al2O3/ZAO passivation layers. The a‐IGZO TFTs with Al2O3/ZAO stack exhibit high performance and excellent stabilities under electrical, thermal, and environmental tests with negligible threshold voltage shift. The origin of the device performances and improved stabilities are analyzed using X‐ray photoelectron spectroscopy and high‐resolution transmission electron microscopy analyses. It is found that the Zr elements diffuse into the a‐IGZO channel when ZAO is directly deposited on the a‐IGZO, resulting in the deterioration of the device performance. It is also found that the Al2O3 single layer on top of the a‐IGZO cannot protect the back‐channel from moisture diffusion. But a thin Al2O3 layer on top of the TFTs can protect the diffusion of Zr elements from ZAO into the a‐IGZO channel and enhances the performance and stabilities. Therefore, the low cost, Al2O3/ZAO stack by spray pyrolysis on the sputtered a‐IGZO can be an excellent passivation for highly stable metal‐oxide TFTs.

show abstract

Section: Introductionmentioning

confidence: 99%

Low Cost, Al₂O₃ and ZrAlO_x Stack Passivation by Spray Pyrolysis for Highly Stable Amorphous InGaZnO Thin‐Film Transistors

Islam

Hasan

Ali

et al. 2022

Adv Materials Inter

Self Cite

View full text Add to dashboard Cite

show abstract

Low‐Temperature Poly‐Si Thin‐Film Transistor with High‐k ZrAlO_x Gate Insulator with SiO₂ Blocking Layer

Kim,

Jung,

Islam

et al. 2024

Adv Materials Technologies

View full text Add to dashboard Cite

Low‐power electronic devices are of increasing interest with high‐k gate insulators (GI). Herein, the performance and stability of low‐temperature poly‐Si (LTPS) thin‐film transistors (TFTs) are investigated with two different GIs: spray pyrolyzed zirconiumaluminum oxide (ZAO) directly deposited on poly‐Si, and SiO2/ZAO stack GI. The LTPS TFT with SiO2/ZAO stack GI exhibits hysteresis free characteristics with a threshold voltage of −0.2 V, field‐effect mobility of 114.4 cm2 V−1 s−1, subthreshold swing of 0.10 V dec−1, and high on/off current ratio of 7.3 × 108, at a gate voltage sweeping ±6 V. The TFT exhibits very stable operation under negative bias temperature stress. The X‐ray photoelectron spectroscopy and high‐resolution transmission electron microscopy analyses demonstrate that the diffusion of Zr and Al into poly‐Si deteriorates device performance with ZAO only GI. A thin SiO2 on LTPS blocks the diffusion of Zr and Al, resulting the high‐performance and stable p‐type LTPS TFT with a high‐k SiO2/ZAO stack GI. Finally, a 7‐stage ring oscillator using LTPS TFTs with SiO2/ZAO stack GI is demonstrated, exhibiting an oscillation frequency of 7.49 MHz and a propagation delay of 9.54 ns at a supply voltage of 6 V, indicating its suitability for low‐power consumption TFT electronics and displays.

show abstract

Region‐selective shift register by a single output enable signal for a multiple refresh frequency driving scheme

Chang,

Kim,

Nam

2024

J Soc Info Display

View full text Add to dashboard Cite

Many low‐power technologies have been developed for high‐performance displays. One method is to vary the refresh rate according to the input image, where frequencies are reduced over still images and slow‐moving videos. To support the variable refresh rate scheme, the programmable gate driver circuit should be integrated. This paper proposes a thin‐film transistor (TFT) shift register of which output pulse is simply controlled by an enable signal. Because the output pulse generation is directly adjusted without the previous programming period, various output pulse sequences are possible with the high flexibility. The shift register is composed by adding six TFTs and one capacitor to a conventional circuit that provides a carry pulse to a next stage. The simulation program with integrated circuit emphasis (SPICE) simulation ensures that gate pulses for any numbers of lines in any regions can be generated within one frame only by applying the enable signal at the corresponding timing, resulting in multiple refresh frequencies in a screen. In addition, it is verified that additional TFTs and capacitor contribute to only the negligible increase in power consumption by 2.1%, compared to a conventional shift register.

show abstract

High Performance Dual Gate Blue Laser Annealed Poly-Si Thin-Film Transistor for High-Resolution Displays

Cited by 7 publications

References 49 publications

Low Cost, Al₂O₃ and ZrAlO_x Stack Passivation by Spray Pyrolysis for Highly Stable Amorphous InGaZnO Thin‐Film Transistors

Low Cost, Al₂O₃ and ZrAlO_x Stack Passivation by Spray Pyrolysis for Highly Stable Amorphous InGaZnO Thin‐Film Transistors

Low‐Temperature Poly‐Si Thin‐Film Transistor with High‐k ZrAlO_x Gate Insulator with SiO₂ Blocking Layer

Region‐selective shift register by a single output enable signal for a multiple refresh frequency driving scheme

Contact Info

Product

Resources

About

High Performance Dual Gate Blue Laser Annealed Poly-Si Thin-Film Transistor for High-Resolution Displays

Cited by 7 publications

References 49 publications

Low Cost, Al2O3 and ZrAlOx Stack Passivation by Spray Pyrolysis for Highly Stable Amorphous InGaZnO Thin‐Film Transistors

Low Cost, Al2O3 and ZrAlOx Stack Passivation by Spray Pyrolysis for Highly Stable Amorphous InGaZnO Thin‐Film Transistors

Low‐Temperature Poly‐Si Thin‐Film Transistor with High‐k ZrAlOx Gate Insulator with SiO2 Blocking Layer

Region‐selective shift register by a single output enable signal for a multiple refresh frequency driving scheme

Contact Info

Product

Resources

About

Low Cost, Al₂O₃ and ZrAlO_x Stack Passivation by Spray Pyrolysis for Highly Stable Amorphous InGaZnO Thin‐Film Transistors

Low Cost, Al₂O₃ and ZrAlO_x Stack Passivation by Spray Pyrolysis for Highly Stable Amorphous InGaZnO Thin‐Film Transistors

Low‐Temperature Poly‐Si Thin‐Film Transistor with High‐k ZrAlO_x Gate Insulator with SiO₂ Blocking Layer