High performance electric-double-layer amorphous IGZO thin-film transistors gated with hydrated bovine serum albumin protein

Chen, Shih Han; Liu, Hung Chuan; Lee, Chun Yi; Gan, Jon Yiew; Zan, Hsiao‐Wen; Hwang, Jaulang; Cheng, Yi Yun; Lyu, Ping

doi:10.1016/j.orgel.2015.05.046

Cited by 15 publications

(5 citation statements)

References 34 publications

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“…When the annealed temperature increases to 350 °C, the Gd 2 O 3 films show the smaller frequency dependence of capacitance, which means that the high-temperature annealing promote the formation of oxide lattice. However, the high-frequency dependence is related to the EDL in the film, which is consistent with the results from other electrolyte dielectrics. − To ensure the leakage properties and the EDL formation, 300 °C is considered as the promising annealing temperature for the Gd 2 O 3 film fabrication. However, a more comprehensive in-depth study is still needed to investigate the temperature-induced conversion process of Gd 2 O 3 .…”

Section: Resultssupporting

confidence: 78%

Artificial Synapse Emulated through Fully Aqueous Solution-Processed Low-Voltage In₂O₃ Thin-Film Transistor with Gd₂O₃ Solid Electrolyte

Zhou

Yang

et al. 2019

ACS Appl. Mater. Interfaces

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Brain-like neuromorphic computing system provides an alternative approach for the future computer for its characteristics of high-efficiency, power-efficient, self-learning, and parallel computing. Therefore, the imitation of synapse behavior based on microelectronics is particularly important. Recently, the synaptic transistors have received widespread attention. Among them, solid oxide-based synaptic transistors are more compatible with the largescale fabrication than the liquid and organic-based transistors. So the development of oxide synaptic transistor is required. Here, a novel aqueous solution-processed Gd 2 O 3 is suggested to be the solid electrolyte for synaptic transistors. The microstructure and the dielectric properties of Gd 2 O 3 film are investigated, which show the potential for the simulation of synaptic transmission. Then, the fully aqueous solution-processed In 2 O 3 /Gd 2 O 3 thin-film transistor (TFT) is fabricated. The device exhibits an acceptable electrical performance with a small threshold voltage of 1.24 V, and a small subthreshold swing of 0.12 V/decade. The artificial synapse behavior is stimulated and the short-term plasticity of In 2 O 3 /Gd 2 O 3 TFT is studied. The dependence of its excitatory postsynaptic current on presynaptic pulse magnitude, width, and frequency is verified. Besides, the synapse behavior of devices under continuous illumination stresses is investigated. The lights with different photon energy have different effects on the synaptic transmission, which is related to the ionization of oxygen vacancies. Our results demonstrate that fully aqueous solution-processed In 2 O 3 TFT with Gd 2 O 3 solid electrolyte is a candidate for the synaptic transistor.

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Section: Resultssupporting

confidence: 78%

Artificial Synapse Emulated through Fully Aqueous Solution-Processed Low-Voltage In₂O₃ Thin-Film Transistor with Gd₂O₃ Solid Electrolyte

Zhou

Yang

et al. 2019

ACS Appl. Mater. Interfaces

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“…Pea protein contains many amino acids, and lysine is one kind among these [19,20]. As reported previously, lysine can react with water to generate the hydroxide anions (OH − ) and positively charged side chain -(CH 2 ) NH 3+ [21]. Besides, other aminoacids can also generate H + , OH − and ion chains.…”

Section: Introductionmentioning

confidence: 90%

Double in-plane-gate IZO-based thin-film transistors with pea protein gate dielectrics

Luo¹,

Gao²,

Wang³

et al. 2019

J. Phys. D: Appl. Phys.

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Double in-plane-gate indium-zinc-oxide (IZO) thin-film transistors (TFTs) using pea protein as the gate dielectric films were fabricated on ITO glass substrates at room temperature. Pea protein, a natural biodegradable solid electrolyte, showed a very high specific gate capacitance of 2.0 μF cm −2 at 1.0 Hz due to the electric-double-layer effect. The field effect mobility, current ON/OFF ratio, and subthreshold swing of the IZO-based TFTs with bottom gate were estimated to be 27.6 cm 2 V −1 s −1 , 3 × 10 6 , and 167 mV/decade, respectively. Then, a resistor-loaded inverter with a high voltage gain of 18 was investigated. At last, 'NAND' logic operation was demonstrated with two in-plane gates as the input terminals. Such double in-plane-gate IZO-based TFTs with pea protein gate dielectrics have potential applications in low-cost electronics.

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“…several hundred degrees Celsius in air produces oxide films. Advantages of AMOs include their high electron mobility, which can be well over 10 cm 2 V −1 s −1 , leading in principle to high gain in EGT sensing applications 9,123,124 . Moreover, AMOs can be patterned using traditional photolithographic approaches (indium-gallium-zinc oxide (IGZO) transistors are already used in industry) 130 , or with additive manufacturing strategies.…”

Section: Ion-permeable Channel H +mentioning

confidence: 99%

Electrolyte-gated transistors for enhanced performance bioelectronics

Torricelli

Adrahtas

Bao

et al. 2021

Nat Rev Methods Primers

266

237

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Bioelectronics enables the study of the aqueous media that host soft tissues and interfaces for their proper function, as well as of the connections between various cells and/or organs, which communicate by exchanging specific ions and biomolecules 1 . The fundamental properties of the biological systems set the requirements of the electronics counterpart. Electrolyte-gated transistors (EGTs) have emerged as important building blocks for enhanced bioelectronics because they are stable in an aqueous environment, operate at low voltages and can transduce and amplify biological signals into electronic signals [2][3][4][5] .EGTs are three-terminal devices where the conductivity of a semiconducting material connected to two electrodes, classified as the source and the drain, is modulated by a third electrode known as the gate. In a basic EGT, the gate electrode and the semiconducting channel are in direct contact with the electrolyte. A voltage V G and V D is applied at the gate and drain electrode, respectively (Fig. 1a). V G and V D are referenced to the source voltage, which is typically set to ground, V S = 0 V. The polarity and magnitude of the voltage applied to the gate electrode result in a drift of cations or anions from the electrolyte to the semiconducting channel. The ionic charges can enhance or deplete the electronic charges residing in the semiconductor channel. This ionicelectronic modulation gives rise to a large variation of the channel conductivity that, in turn, manifests in a large modulation of the electronic source to drain current flowing through the transistor channel. Upon application of the gate, source and drain voltages, ions drift into the electrolyte and accumulate at the gate and semiconductor. The sign of the gate voltage controls the charge type of these ions (cations or anions), whereas its magnitude controls their density. For example, when a positive gate voltage is applied, the anion concentration increases at the gate and the cation concentration increases at the semiconducting channel. The sub-nanometre scale dimension of the ions interacting with the gate and channel materials results in a large electrostatic interaction at the gate/electrolyte and electrolyte/channel interfaces, which yields the low-voltage operation of EGTs that can range from a few volts to even less than 1 V, depending on the specific materials used. The low-voltage operation is critically important for electrophysiology and in the case of a large variety of biosensors. In addition, in contrast to the conventional thin-film field-effect transistors, in EGTs the gate is not required to be positioned in front of the channel as the charge modulation is due to the accumulation or depletion of ions transported within

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High performance electric-double-layer amorphous IGZO thin-film transistors gated with hydrated bovine serum albumin protein

Cited by 15 publications

References 34 publications

Artificial Synapse Emulated through Fully Aqueous Solution-Processed Low-Voltage In₂O₃ Thin-Film Transistor with Gd₂O₃ Solid Electrolyte

Artificial Synapse Emulated through Fully Aqueous Solution-Processed Low-Voltage In₂O₃ Thin-Film Transistor with Gd₂O₃ Solid Electrolyte

Double in-plane-gate IZO-based thin-film transistors with pea protein gate dielectrics

Electrolyte-gated transistors for enhanced performance bioelectronics

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High performance electric-double-layer amorphous IGZO thin-film transistors gated with hydrated bovine serum albumin protein

Cited by 15 publications

References 34 publications

Artificial Synapse Emulated through Fully Aqueous Solution-Processed Low-Voltage In2O3 Thin-Film Transistor with Gd2O3 Solid Electrolyte

Artificial Synapse Emulated through Fully Aqueous Solution-Processed Low-Voltage In2O3 Thin-Film Transistor with Gd2O3 Solid Electrolyte

Double in-plane-gate IZO-based thin-film transistors with pea protein gate dielectrics

Electrolyte-gated transistors for enhanced performance bioelectronics

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Artificial Synapse Emulated through Fully Aqueous Solution-Processed Low-Voltage In₂O₃ Thin-Film Transistor with Gd₂O₃ Solid Electrolyte

Artificial Synapse Emulated through Fully Aqueous Solution-Processed Low-Voltage In₂O₃ Thin-Film Transistor with Gd₂O₃ Solid Electrolyte