1994
DOI: 10.1109/4.315213
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High-performance GaAs switch IC's fabricated using MESFET's with two kinds of pinch-off voltages and a symmetrical pattern configuration

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Cited by 29 publications
(7 citation statements)
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“…The equivalent circuit at the off state is shown in Figure 2(b). It had been confirmed that this circuit represents the off status accurately [4]. The MESFET was mounted in the SO8 package used for the simulation, as shown in Figure 2(c>.…”
Section: Accuracy Of the Simulationmentioning
confidence: 80%
“…The equivalent circuit at the off state is shown in Figure 2(b). It had been confirmed that this circuit represents the off status accurately [4]. The MESFET was mounted in the SO8 package used for the simulation, as shown in Figure 2(c>.…”
Section: Accuracy Of the Simulationmentioning
confidence: 80%
“…In receive mode, the isolation is only 15dB, as there's no discharge path for power amplifier. Figure 3.6 shows a typical T/R switch implementation using GaAs MESFET depletion mode transistors [45]. The basic operation is as follows: [45] Under realistic conditions, GaAs MESFETs are not perfect on-off switches but can be modeled as having a finite on-resistance (R on ) when conducting and a finite off-capacitance (C off ) when cut-off.…”
Section: Cmos T/r Switch With Lc-tuned Substrate Biasmentioning
confidence: 99%
“…This technique enabled us to develop antenna switch ICs for 01-3 V and +3/0 V operation [3]. B. Compacvhigh isolation technique: By using electromagnetic field simulations, we were able to develop a local switch IC with isolation characteristics of 30 dB using a ultra-compact plastic package (called CP6: Chip Pack a which was 1/4th the size of conventional 8-pin package(S08).…”
Section: Ctl-tx Ant Ctl-rxmentioning
confidence: 99%