High performance GaN HEMT class-AB RF power amplifier for L-band applications

Hayat, Khizar; Kashif, A.; Azam, Sher; Mehmood, Tariq; Imran, Muhammad

doi:10.1109/ibcast.2013.6512186

Cited by 12 publications

(5 citation statements)

References 5 publications

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“…Table 2 summarises the overall performance results of the amplifier line up. Other works related to the broadband high PA also discussed by the authors [32–34].…”

Section: Measurement Resultsmentioning

confidence: 99%

Broadband high performance laterally diffused metal–oxide–semiconductor power amplifier for mobile two‐way radio applications

Kumar¹,

Anand

2015

IET Circuits, Devices & Systems

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This paper highlights achievement of broadband high performance power amplifier (PA) line up for mobile twoway radio applications. In typical two-way radio applications the input radio-frequency signal to the first PA stage comes directly from the voltage controlled oscillator, with typically 3 dBm power. Owing to high output power requirement (∼80 W) of mobile radio applications, up to three PA device stages are normally cascaded (pre-driver, driver and final PA stage). The key point in the design of the PA line up concerns the final stage. Here, this paper introduces a design methodology based on parallel-combined impedance matching technique (from theoretical derivation) enables the designers to develop broadband PA with actual PA device impedance (implementation of new generation laterally diffused metal-oxidesemiconductor device). Experimental results demonstrated output power of ∼80 W and gain of 45 dB, while preserving efficiency of 55% over the bandwidth from 760 to 870 MHz. According to author's knowledge, this amplifier demonstrated highest efficiency with 13 V DC supply (operating at 80 W) in UHF broadband frequency with high gain operation (more than 45 dB) up to date.

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“…Table 2 summarises the overall performance results of the amplifier line up. Other works related to the broadband high PA also discussed by the authors [32–34].…”

Section: Measurement Resultsmentioning

confidence: 99%

Broadband high performance laterally diffused metal–oxide–semiconductor power amplifier for mobile two‐way radio applications

Kumar¹,

Anand

2015

IET Circuits, Devices & Systems

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“…The extracted source impedance is 3.16 − j20.42 Ω, and it provides an output power of 45.5 dBm with PAE of 59%. Similarly, a load-pull analysis is performed and the extracted load impedance is 14.18 − j12.29 Ω [14]. To transform the extracted impendences, an L-type matching network (Lm and Cm) is used at the input whereas the balanced stub method is implemented at the output.…”

Section: High-power Amplifiermentioning

confidence: 99%

Eighty nine‐watt cascaded multistage power amplifier using gallium nitride‐on‐silicon high electron mobility transistor for L‐band radar applications

Hayat¹,

Zafar

Mehmood³

et al. 2021

IET Circuits, Devices & Syst

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This work presents a gallium nitride (GaN) high electron mobility transistor (HEMT)based cascaded multistage power amplifier (MPA) in class-AB for L-band radar applications. The purpose of this endeavour is to develop an MPA using GaN HEMT devices to achieve optimised parameters such as high gain, high power, better efficiency, and linearity in a compact size. In an MPA design with multiple stages, oscillations are common owing to unwanted high gain at the lower frequency range. To overcome this issue, we introduced interstage harmonic termination networks as a novel approach to suppress high gain at low frequencies, which are prone to oscillations. The proposed cascaded MPA provides the maximum radio-frequency output power of 89 W and a power gain of 52 dB with an associated power-added efficiency of 51%. Second and third harmonic levels are −32.5 and −37 dBc, respectively. Two-tone measurements are performed with a frequency separation of 10 MHz, and an intermodulation level of less than −33 dBc is achieved. | INTRODUCTIONPower amplifiers (PAs) are widely used in wireless communication and radar applications. Microwave frequencies (UHF, Lband, S-band etc.) have a dominant role in commercial and defence applications. Modern communication standards such as GSM, CDMA, W-CDMA, and WiMAX with digital modulation schemes, such as QAM, QPSK, DQPSK, OFDM, are characterised by varying signal envelopes with a high peak-toaverage power ratio [1,2]. To fulfil the requirements of communication standards, PA design includes the frequency of operation, output power, bandwidth, efficiency, gain, linearity, and cost. However, it is challenging to achieve optimum values of all parameters simultaneously [3,4]. Therefore, trade-offs must be made, and a subset of the desired parameters can be satisfied depending on the specific needs of the application. Some traditional trade-offs are gain versus bandwidth, operating frequency versus output power, and linearity versus efficiency [4]. In wireless communication, PA has the main role of amplifying the desired modulated signal before transmission [5]. Thus, multistage PAs (MPAs) are designed to accomplish the need for a link with high gain and high output power. In MPA design, a critical concern is the possibility of oscillations caused by instabilities including very high gain, positive feedback, resonant tanks, poor isolation between DC and radiofrequency (RF) paths, and parametric oscillations of nonlinear capacitances. These instabilities are particularly worse at lower frequencies owing to high gain, and detection to avoid such oscillations is always tedious [5,6].Gallium nitride (GaN), a wideband gap semiconductor, has emerged as a potential candidate to fulfil the requirements of current and future communication systems [7,8]. GaN high electron mobility transistor (HEMT)-based PAs provide a better trade-off with high output power with a compact size, owing to their high output power densities, compared with travelling wave tube amplifiers [9]. Gurdal et al. demonstrated GaN-based...

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“…Research on RF power amplifier has been conducted on [4]- [7], one of the research on power amplifier was performed at the L-Band frequency by using the GaN HEMT transistor component yielding a power output of 45.50 dBm and a gain of 13.50 dB [4]. The design results in high output power but it requires high input power due to the small gain value.…”

Section: Introductionmentioning

confidence: 99%

“…Subsequently, the research [6] using FET transistors produced an output power of 43 dBm with a gain of 17 dB and in research [7] Based on the results of the research [4]- [7], BJT has higher gain characteristics than FET but one of the developments from FET, i.e., GaAs pHEMT, has a higher gain than BJT with a small input voltage source and this can be used up to the frequency range of 100 GHz [1]. In its implementation, BJT is used on devices with high input voltage sources and FET is used on devices with small or high voltage sources [8].…”

Section: Introductionmentioning

confidence: 99%

“…Referring to the results of the research [4]- [7], in this research, the power amplifier is designed on one level by using the active component of GaAs (Gallium Arsenide) Pseudomorphic High Electron Mobility Transistor (p-HEMT) MMG15241H with high gain characteristics. The advantage of this transistor is the output power of 24 dBm at 1 dB compression and it has a maximum gain of 1.270 GHz at 20.57 dB.…”

Section: Introductionmentioning

confidence: 99%

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Design of L-Band Power Amplifier by Using Microstrip-Based GaAs p-HEMT MMG15241H Transistor

Amiruddin¹,

Syihabuddin²,

Wahyu³

2018

INFOTEL

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The power amplifier which is designed by using BJT (Bipolar Junction Transistor) has a larger power consumption, hence in this research, the FET GaAs p-HEMT MMG15241H is used. The power amplifier designed in this research uses microstrip-based and works at the middle frequency of 1.27 GHz. This research yielded a power amplifier which works at the bandwidth with a range frequency of 1.265 – 1.275 GHz, a gain result of 20.02 dB, and input return loss result of -24.45 dB.

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High performance GaN HEMT class-AB RF power amplifier for L-band applications

Cited by 12 publications

References 5 publications

Broadband high performance laterally diffused metal–oxide–semiconductor power amplifier for mobile two‐way radio applications

Broadband high performance laterally diffused metal–oxide–semiconductor power amplifier for mobile two‐way radio applications

Eighty nine‐watt cascaded multistage power amplifier using gallium nitride‐on‐silicon high electron mobility transistor for L‐band radar applications

Design of L-Band Power Amplifier by Using Microstrip-Based GaAs p-HEMT MMG15241H Transistor

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