Meet. Abstr.
 2007
DOI: 10.1149/ma2007-02/20/1167
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High Performance Gate-First pMISFET with TiN/HfSiON Gate Stacks Fabricated with PVD-Based In-Situ Method

Takaaki Kawahara,
Yukio Nishida,
Shinsuke Sakashita
et al.

Abstract: not Available.

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