2018 IEEE International Electron Devices Meeting (IEDM) 2018
DOI: 10.1109/iedm.2018.8614707
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High-Performance Germanium-an-Silicon Lock-in Pixels for Indirect Time-of-Flight Applications

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Cited by 14 publications
(4 citation statements)
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“…23 Chang, J., Park, P., Jung, H., Jeong, B.J., Hahm, D., Nagamine, G., Ko, J., Cho, J., Padiha, L.A., Lee, D.C., Lee, C., Char, K., & Bae, W.K. (2018). Unraveling the origin of operational stability of quantum dot based light-emitting diodes.…”
Section: Discussionmentioning
confidence: 99%
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“…23 Chang, J., Park, P., Jung, H., Jeong, B.J., Hahm, D., Nagamine, G., Ko, J., Cho, J., Padiha, L.A., Lee, D.C., Lee, C., Char, K., & Bae, W.K. (2018). Unraveling the origin of operational stability of quantum dot based light-emitting diodes.…”
Section: Discussionmentioning
confidence: 99%
“…Advanced Materials, 17 (5), 515-522. 31 Kim, D.H., D'Aleo, A., Chen, X., Sandanayaka, A.D.S., Yao, D., Zhao, L., Komino, T., Zaborova, E., Canard, G., Tsuchiya, Y., Choi, E., Wu, J.W., Fages, F., Bredas, J., Ribierre, J., & Adachi, C. (2018). High-efficiency electroluminescence and amplified spontaneous emission from a thermally activated delayed fluorescent near-infrared emitter.…”
Section: Discussionmentioning
confidence: 99%
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“…These fabrication processes result in low yields and very high costs and create limitations on array size, pixel size, and ultimately on image sensor resolution. SiGe sensor technology holds promise for some applications with high resolution and lower cost, but unfortunately is plagued currently with higher dark currents, smaller spectral range, and thick layers to absorb the longer wavelengths [2]. Quantum dot (QD) photodetector technology on the other hand holds great promise in enabling low cost (100-1000X lower), high performance, high resolution, large spectral response (UV to extended-SWIR) image sensors [3][4][5].…”
Section: Introductionmentioning
confidence: 99%