High performance HgCdTe two-color infrared detectors grown by molecular beam epitaxy

Rajavel, R. D.; Jamba, D. M.; Wu, O. K.; Jensen, J. Eric; Wilson, J. A.; Patten, E. A.; Kosai, K.; Goetz, P. M.; Chapman, G. R.; Radford, W. A.

doi:10.1016/s0022-0248(96)01200-6

Cited by 35 publications

(22 citation statements)

References 7 publications

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“…Considerable progress has been recently demonstrated in multispectral HgCdTe detectors employing MBE and MOCVD for the growth of variety devices [54][55][56][57][58][59][60][61]. Also QWIP's technology demonstrates considerably progress in fabrication of multicolour FPAs [40,44,[62][63][64][65][66].…”

Section: Dual-band Ir Focal Plane Arraysmentioning

confidence: 99%

Infrared detectors: an overview

Rogalski

2002

Infrared Physics & Technology

698

343

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The paper presents progress in infrared (IR) detector technologies during 200 history of their development. Classification of two types of IR detectors (photon detectors and thermal detectors) is done on the basis of their principle of operation. The overview of IR systems and detectors is presented. Also recent progress in different IR technologies is described. Discussion is focused mainly on current and the most rapidly developing detectors: HgCdTe heterostructure photodiodes, quantum well AlGaAs/GaAs photoresistors, and thermal detectors. The outlook for near-future trends in IR technologies is also presented. Ó

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Section: Dual-band Ir Focal Plane Arraysmentioning

confidence: 99%

Infrared detectors: an overview

Rogalski

2002

Infrared Physics & Technology

698

343

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“…This structure is similar to the device fabricated by BAE Systems (Lexington, MA) and Raytheon (Goleta, CA). 4,5 The numerical simulation model includes a suitable set of material parameters and a suitable grid in three dimensions has to be generated; second, the Poisson and diffusion equations for electron and holes have to be solved on this grid. We have successfully implemented a 3-D model and simulated the full 3-D pixel and multipixel structures.…”

Section: -D Pixel Simulationmentioning

confidence: 99%

Design and development of multicolor MWIR/LWIR and LWIR/VLWIR detector arrays

Sood

Egerton

Puri

et al. 2005

Journal of Elec Materi

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Multicolor infrared (IR) focal planes are required for high-performance sensor applications. These sensors will require multicolor focal plane arrays (FPAs) that will cover various wavelengths of interest in mid wavelength infrared/long wavelength infrared (MWIR/LWIR) and long wavelength infrared/very long wavelength infrared (LWIR/VLWIR) bands. There has been significant progress in HgCdTe detector technology for multicolor MWIR/LWIR and LWIR/VLWIR FPAs. 1-3 Two-color IR FPAs eliminate the complexity of multiple single-color IR FPAs and provide a significant reduction of weight and power in simpler, reliable, and affordable systems. The complexity of a multicolor IR detector MWIR/LWIR makes the device optimization by trial and error not only impractical but also merely impossible. Too many different geometrical and physical variables need to be considered at the same time. Additionally, material characteristics are only relatively controllable and depend on the process repeatability. In this context, the ability of performing "simulation experiments" where only one or a few parameters are carefully controlled is paramount for a quantum improvement of a new generation of multicolor detectors for various applications.

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“…The MBE systems equipped with Hg, Te, and CdTe sources are used for HgCdTe TLHJ growth, and system details and growth conditions pertinent to TLHJ growth has been reported in previous publications. [8][9][10] Continuous improvements in MBE growth of TLHJ layers has resulted in increasing wafer sizes with better cutoff uniformity and lower numbers of defects. These are all key factors that contribute to improvements in wafer and FPA yield that enable demand for higher performance and reduced product costs to be met.…”

Section: Materials Growthmentioning

confidence: 99%

HgCdTe focal plane arrays for dual-color mid- and long-wavelength infrared detection

Smith

Pham

Venzor

et al. 2004

Journal of Elec Materi

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Raytheon Vision Systems (RVS, Goleta, CA) in collaboration with HRL Laboratories (Malibu, CA) is contributing to the maturation and manufacturing readiness of third-generation, dual-color, HgCdTe infrared staring focal plane arrays (FPAs). This paper will highlight data from the routine growth and fabrication of 256 ϫ 256 30-µm unit-cell staring FPAs that provide dual-color detection in the mid-wavelength infrared (MWIR) and long wavelength infrared (LWIR) spectral regions. The FPAs configured for MWIR/MWIR, MWIR/LWIR, and LWIR/LWIR detection are used for target identification, signature recognition, and clutter rejection in a wide variety of space and ground-based applications. Optimized triple-layer heterojunction (TLHJ) device designs and molecular beam epitaxy (MBE) growth using in-situ controls has contributed to individual bands in all dual-color FPA configurations exhibiting high operability (>99%) and both performance and FPA functionality comparable to state-of-the-art, single-color technology. The measured spectral cross talk from out-of-band radiation for either band is also typically less than 10%. An FPA architecture based on a single-mesa, single-indium bump, and sequential-mode operation leverages current single-color processes in production while also providing compatibility with existing second-generation technologies.

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High performance HgCdTe two-color infrared detectors grown by molecular beam epitaxy

Cited by 35 publications

References 7 publications

Infrared detectors: an overview

Infrared detectors: an overview

Design and development of multicolor MWIR/LWIR and LWIR/VLWIR detector arrays

HgCdTe focal plane arrays for dual-color mid- and long-wavelength infrared detection

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