High-Performance Hybrid Electronic Devices from Layered PtSe₂Films Grown at Low Temperature

Abstract

Layered two-dimensional (2D) materials display great potential for a range of applications, particularly in electronics. We report the large-scale synthesis of thin films of platinum diselenide (PtSe), a thus far scarcely investigated transition metal dichalcogenide. Importantly, the synthesis by thermally assisted conversion is performed at 400 °C, representing a breakthrough for the direct integration of this material with silicon (Si) technology. Besides the thorough characterization of this 2D material, we demonstrate its promise for applications in high-performance gas sensing with extremely short response and recovery times observed due to the 2D nature of the films. Furthermore, we realized vertically stacked heterostructures of PtSe on Si which act as both photodiodes and photovoltaic cells. Thus, this study establishes PtSe as a potential candidate for next-generation sensors and (opto-)electronic devices, using fabrication protocols compatible with established Si technologies.

Large‐area high quality PtSe2 thin film with versatile polarity

“…I sd decreases all the time with the V g increasing from ‐80 to 80 V, demonstrating its p‐type behavior. This result is consistent with reported PtSe 2 filmbut inconsistent with mechanical exfoliated PtSe 2 flake . As the bulk PtSe 2 crystal is always synthesized by CVT method with Pt, S, P, Se powders mixed, we suspect it is the Se vacancies or doped atoms like sulfur (S) that play a vital role in determining polarity of PtSe 2 .…”

Recommended Methods to Study Resistive Switching Devices

“…The two most widespread methods to synthesize 2D materials applied to RS devices are chemical vapor deposition (CVD) and liquid-phase exfoliation. [89][90][91] A solution commonly employed is to synthesize the 2D material on the most suitable substrates (metallic foils for graphene [80] and h-BN [85][86][87] and SiO 2 or sapphire for 2D transition metal dichalcogenides (TMDs) [81][82][83] ) and transfer it on the desired sample using different methods, [92][93][94] being the wet transfer with the assistance of a polymer scaffold the most used by the RS community. The problem is that the temperature used for the growth is typically >700 °C, which prevents growing the 2D material on wafers with existing integrated circuits due to diffusion problems; the maximum temperature allowed for complementary metal-oxidesemiconductor (CMOS) back-end of line integration is typically 450 °C.…”

Low‐dimensional nanomaterial/Si heterostructure‐based photodetectors

“…Similar to graphene, TMDCs have many excellent properties, such as good mechanical flexibility and thermal stability, and have been widely used in optical and electrical devices . Although TMDCs have a lower mobility than graphene, they have higher optical absorptivity and a tunable bandgap due to the different number of layers.…”