2021 4th International Conference on Recent Trends in Computer Science and Technology (ICRTCST) 2022
DOI: 10.1109/icrtcst54752.2022.9781944
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High-Performance IIR Filter Implementation Using FPGA

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Cited by 15 publications
(16 citation statements)
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“…Due to their higher threshold voltage, previously known methods cannot be operated at low voltages. [32][33][34][35][36][37][38][39] This tells us that the previously known and current known methodologies had a significant drawback which creates the need to invent new methodologies to make the circuit more efficient. It is also known that the static leakage current is also more in existing and previously known methodologies.…”
Section: Significant Drawbacks In the Existed Methodsmentioning
confidence: 99%
“…Due to their higher threshold voltage, previously known methods cannot be operated at low voltages. [32][33][34][35][36][37][38][39] This tells us that the previously known and current known methodologies had a significant drawback which creates the need to invent new methodologies to make the circuit more efficient. It is also known that the static leakage current is also more in existing and previously known methodologies.…”
Section: Significant Drawbacks In the Existed Methodsmentioning
confidence: 99%
“…The method minimizes the weighted least square cost function using the BFGS method and the results demonstrate the effectiveness of this approach in achieving excellent filter design outcomes. The work by Vijay, et al (2022) proposes an IIR filter model referred to as parallel pipeline, which is built upon a FIR filter including the two-level pipeline-based IIR filter and a look-ahead-based models, both of which have been reported to yield substantial enhancements in filter efficiency.…”
Section: Introductionmentioning
confidence: 99%
“…Because of stability concerns, the twin port designs that implement read disturb-free feature like that seen within the 7T and 8T cell implementation might become more practical in the futures RAM cell implementation. [1][2][3][4][5] Zone scaling abilities of numerous types of SRAM, edge help answers for voltage changeability issues, which depend on different endeavors from 6T to 8T and 10T, yet additionally fuse of various voltage supply for cell terminal biasing and having arrangement controls of read and write activity was thought about, the varieties in SRAM arrangements were investigated considering an effect on the necessary territory overhead for each plan arrangement given by ever-expanding irregular varieties. Unlike the DRAM cell, total power consumption, static power dissipation, dynamic power dissipation, static current and area which will affect the speed of operation of novel SRAM cell.…”
Section: Introductionmentioning
confidence: 99%