High performance measurement of preamplifier circuits based bipolar/field effect transistors for the optimum photodiode receivers performance in optical communication system

Abstract

This paper indicated the high speed preamplifier circuits based bipolar/field effect transistors for the optimum photodiode receiver’s performance in optical communication system. The total photodiode bandwidth is studied against photodiode capacitance and input photodiode resistance. The total photodiode bandwidth is demonstrated against photodiode capacitance and ambient temperature variations. The total photodiode spectral/thermal noise density is clarified versus the photodiode based bipolar/FET transistor and ambient temperature variations. The total photodiode transconductance, optimum photodiode gain and the optimum photodiode signal per noise ratio are analyzed and clarified against the photodiode based bipolar/FET transistor and ambient temperature variations at various input photodiode resistance. Bit error rate at receiver is demonstrated versus the photodiode based bipolar/FET transistor and input photodiode resistance variations at various ambient temperature.