High-Performance Normally-Off ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}$ MOSFET Using a Wet Etching-Based Gate Recess Technique

Wang, Ye; Wang, Maojun; Xie, Bing; Wen, Cheng P.; Wang, Jinyan; Hao, Yue; Wu, Wengang; Chen, Kevin J.; Shen, Bo

doi:10.1109/led.2013.2279844

Cited by 173 publications

(87 citation statements)

References 20 publications

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“…Mobility values reach 250 cm 2 /Vs [11] for normally-off AlGaN/GaN MOSHEMTs. These values are still much lower than the electron mobility in the two-dimensional electron gas due to the existence of high density of interface states at the interface between gate dielectric and GaN.…”

Section: B Influence Of Channel Mobility On Algan/gan Moshemts Parammentioning

confidence: 99%

Modelling and Simulation of Normally-Off AlGaN/GaN MOS-HEMTs

Taube¹,

Sochacki²,

Szmidt³

et al. 2014

International Journal of Electronics and Telecommunications

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Abstract-The article presents the results of modelling and simulation of normally-off AlGaN/GaN MOS-HEMT transistors. The effect of the resistivity of the GaN:C layer, the channel mobility and the use of high-κ dielectrics on the electrical characteristics of the transistor has been examined. It has been shown that a low leakage current of less than 10 −6 A/mm can be achieved for the acceptor dopant concentration at the level of 5 × 10 15 cm −3 . The limitation of the maximum on-state current due to the low carrier channel mobility has been shown. It has also been demonstrated that the use of HfO2, instead of SiO2, as a gate dielectric increases on-state current above 0.7A/mm and reduces the negative influence of the charge accumulated in the dielectric layer.

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Section: B Influence Of Channel Mobility On Algan/gan Moshemts Parammentioning

confidence: 99%

Modelling and Simulation of Normally-Off AlGaN/GaN MOS-HEMTs

Taube¹,

Sochacki²,

Szmidt³

et al. 2014

International Journal of Electronics and Telecommunications

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“…Fig. 3(b) shows the comparison of the I off and I on /I off of the device with reported data in other GaN-based MISFET/MISHEMTs obtained at RT [8]- [10], [12]- [19]. Besides, the 45min PGA has negligible effect on the ohmic contact and the sheet resistance of the device.…”

Section: Device Fabricationmentioning

confidence: 65%

Enhancement Mode (E-Mode) AlGaN/GaN MOSFET With $10^{-13}$ A/mm Leakage Current and $10^{12}$ ON/OFF Current Ratio

Xü

Wang

Cai

et al. 2014

IEEE Electron Device Lett.

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Postgate annealing (PGA) in N 2 /O 2 atmosphere at 300°C for various annealing time is performed on enhancement mode AlGaN/GaN MOSFET fabricated using a self-terminating gate recess etching technique. After 45-min annealing, the device OFF-state leakage current decreases by more than two orders of magnitude and thus a low OFF-state leakage current of ∼10 −13 A/mm is obtained at room temperature, resulting in an excellent ON/OFF current ratio of ∼10 12 . At 250°C, the device still exhibits a low OFF-state leakage current of ∼10 −9 A/mm and high ON/OFF current ratio of ∼10 8 . Meanwhile, a strong correlation between the OFF-state leakage current and mesa isolation current is observed as we change the annealing time: 1) the lower the mesa isolation current and 2) the lower the OFFstate leakage current and thus the higher the ON/OFF current ratio. It is the suppression of the mesa isolation current owing to the passivation of atomic layer deposition Al 2 O 3 that leads to the improvement of the OFF-state leakage current and ON/OFF current ratio after PGA. Besides, the device shows no obvious change in terms of its threshold voltage and maximum drain current after PGA.Index Terms-Post-gate annealing (PGA), GaN, enhancement mode, MOSFET, ON/OFF current ratio, mesa isolation current.

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“…GaN MOSFETs are studied for their applications to logic and power devices with low leakage currents and power consumption. [22][23][24][25][26] To further develop GaN MOSFETs, a reduction in the density of deep-level traps both at interfaces and in bulk substrates is required. Many studies toward realizing highquality MOS capacitors have been reported.…”

Section: Introductionmentioning

confidence: 99%

A transient simulation approach to obtaining capacitance–voltage characteristics of GaN MOS capacitors with deep-level traps

Fukuda

Asai

Hattori

et al. 2018

Jpn. J. Appl. Phys.

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In this study, GaN MOS capacitance-voltage device simulations considering various interface and bulk traps are performed in the transient mode. The simulations explain various features of capacitance-voltage curves, such as plateau, hysteresis, and frequency dispersions, which are commonly observed in measurements of GaN MOS capacitors and arise from complicated combinations of interface and bulk deep-level traps. The objective of the present study is to provide a good theoretical tool to understand the physics of various nonideal measured curves.

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High-Performance Normally-Off ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}$ MOSFET Using a Wet Etching-Based Gate Recess Technique

Cited by 173 publications

References 20 publications

Modelling and Simulation of Normally-Off AlGaN/GaN MOS-HEMTs

Modelling and Simulation of Normally-Off AlGaN/GaN MOS-HEMTs

Enhancement Mode (E-Mode) AlGaN/GaN MOSFET With $10^{-13}$ A/mm Leakage Current and $10^{12}$ ON/OFF Current Ratio

A transient simulation approach to obtaining capacitance–voltage characteristics of GaN MOS capacitors with deep-level traps

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