High-Performance Polycrystalline Silicon Thin-Film Transistors Fabricated by High-Temperature Process with Excimer Laser Annealing

Jiroku, Hiroaki; Miyasaka, Mitsutoshi; Inoue, Satoshi; Tsunekawa, Yoshifumi; Shimoda, Tatsuya

doi:10.1143/jjap.43.3293

Cited by 20 publications

(12 citation statements)

References 6 publications

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“…2. This phenomenon coincides with the result 11) that the ELA process after SPC increased the grain size. From the viewpoint of secondary grain growth, 15) it is observed with ELA, ELA followed by SPC, and SPC followed by ELA.…”

Section: Methodssupporting

confidence: 91%

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Influence of Post Excimer Laser Annealing on Crystallinity of Precursor Polycrystalline Si Film Formed by Solid Phase Crystallization

et al. 2007

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Fig. 1 Relationship between tensile stress of poly-Siˆlm and energy density.Journal of the Vacuum Society of Japan Vol. 50, No. 8 (2007) The crystallinity of polycrystalline Si (poly-Si)ˆlm produced by the combined method of solid phase crystallization (SPC) followed by excimer laser annealing (ELA) or ELA followed by SPC is examined by observing the internal stress and the crystal defect. Tensile stress relaxation occurred when SPC was performed before or after ELA. The defect densities of poly-Sî lms recrystallized by ELA, ELA followed by SPC, and SPC followed by ELA decrease in this order.

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Section: Methodssupporting

confidence: 91%

“…Poly-Sî lm produced by SPC followed by ELA and post heat treatment is reported to be made of the high-crystallinity poly-Si grains. 10,11) In this study, we investigate the internal stress and defect density of poly-Siˆlm produced by SPC followed by ELA and compare them with those of poly-Siˆlm produced by ELA followed by SPC.…”

Section: Introductionmentioning

confidence: 99%

Influence of Post Excimer Laser Annealing on Crystallinity of Precursor Polycrystalline Si Film Formed by Solid Phase Crystallization

et al. 2007

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“…First, the top-gate, coplanar, solid-phase crystallized (SPC), n-type and p-type, LDD and offset poly-Si TFTs are fabricated [25], [26]. Figure 1 shows the fabrication processes and device structures of the LDD and offset TFTs.…”

Section: Ldd and Offset Tftsmentioning

confidence: 99%

Temperature Sensor employing Ring Oscillator composed of Poly-Si Thin-Film Transistors: Comparison between Lightly-Doped and Offset Drain Structures

Taya

Kojima

Mukuda

et al. 2014

IEICE Trans. Electron.

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SUMMARYWe propose a temperature sensor employing a ring oscillator composed of poly-Si thin-film transistors (TFTs). Particularly in this research, we compare temperature sensors using TFTs with lightlydoped drain structure (LDD TFTs) and TFTs with offset drain structure (offset TFTs). First, temperature dependences of transistor characteristics are compared between the LDD and offset TFTs. It is confirmed that the offset TFTs have larger temperature dependence of the on current. Next, temperature dependences of oscillation frequencies are compared between ring oscillators using the LDD and offset TFTs. It is clarified that the ring oscillator using the offset TFTs is suitable to detect the temperature. We think that this kind of temperature sensor is available as a digital device. key words: temperature sensor, ring oscillator, poly-Si, thin-film transistor (TFT), lightly-doped drain structure (LDD), offset drain structure

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“…The top-gate, coplanar, solid-phase crystallized (SPC), n-type, self-aligned and offset TFTs are fabricated [12], [13]. An amorphous Si film is deposited on a quartz substrate using low-pressure chemical vapor deposition (LPCVD) of SiH 4 and crystallized using furnace annealing in N 2 ambient to form a poly-Si film.…”

Section: Temperature Dependences Of Transistor Characteristicmentioning

confidence: 99%

Thermal Sensor Using Poly-Si Thin-Film Transistors With Self-Aligned and Offset Gate Structures

et al. 2013

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We propose a thermal sensor using poly-Si thin-film transistors (TFTs) with self-aligned and offset gate structures. First, the temperature dependences of the transistor characteristic are compared between the self-aligned and offset TFTs. It is found that both the TFTs have the temperature dependence of the off-leakage current, whereas the off-leakage current of the self-aligned TFT is larger than that of the offset TFT. Next, the self-aligned and offset TFTs are included in a cell circuit to detect the temperature utilizing the off-leakage current, which is composed of a pair of 1-transistor and 1-capacitor. It is found that low and high temperatures can be detected using the self-aligned and offset TFTs, respectively. We think that it is promising to integrate this thermal sensor in certain applications using TFTs.Index Terms-Offset gate, off-leakage current, poly-Si, self-aligned gate, thermal sensor, thin-film transistor (TFT), temperature.

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High-Performance Polycrystalline Silicon Thin-Film Transistors Fabricated by High-Temperature Process with Excimer Laser Annealing

Cited by 20 publications

References 6 publications

Influence of Post Excimer Laser Annealing on Crystallinity of Precursor Polycrystalline Si Film Formed by Solid Phase Crystallization

Influence of Post Excimer Laser Annealing on Crystallinity of Precursor Polycrystalline Si Film Formed by Solid Phase Crystallization

Temperature Sensor employing Ring Oscillator composed of Poly-Si Thin-Film Transistors: Comparison between Lightly-Doped and Offset Drain Structures

Thermal Sensor Using Poly-Si Thin-Film Transistors With Self-Aligned and Offset Gate Structures

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