High-Performance, Solution-Processed Organic Thin Film Transistors from a Novel Pentacene Precursor

Afzali, Ali; Dimitrakopoulos, Christos; Breen, Tricia L.

doi:10.1021/ja0266621

Cited by 452 publications

(282 citation statements)

References 18 publications

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“…The four major peaks located at around 542, 584, 628, and 661 nm clearly indicate the characteristic bands of pentacene product from SAP, in agreement with earlier report [10]. It is well known that the pentacene exhibits main absorption peak at about 660-680 nm of the S 0 − S 1 transition [14].…”

Section: Optical Analysissupporting

confidence: 90%

“…The main drawback of pentacene is that it is insoluble in common organic solvents at room temperature since the solubility of pentacene in ordinary organic solvents is extremely low. OFETs are aiming wide range of inexpensive applications alternative gate dielectrics, and low-cost fabrication methods are of interest, including solution-processable pentacene precursors [10,11] and polymer gate dielectrics [3,12], which can be deposited by spin-coating or spray-coating, rather than by vacuum deposition. Polymer gate dielectrics have some advantages [13] and are used as an alternative to conventional inorganic dielectrics.…”

Section: Introductionmentioning

confidence: 99%

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Pentacene Active Channel Layers Prepared by Spin-Coating and Vacuum Evaporation Using Soluble Precursors for OFET Applications

Ochiai

Kumar

Santhakumar

et al. 2012

ISRN Condensed Matter Physics

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Pentacene OFETs of bottom-gate/bottom-contact were fabricated with three types of pentacene organic semiconductors and cross linked Poly(4-vinylphenol) or polycarbonate as gate dielectric layer. Two different processes were used to prepare the pentacene active channel layers: (1) spin-coating on dielectric layer using two different soluble pentacene precursors of SAP and DMP; (2) vacuum evaporation on PC insulator. X-ray diffraction studies revealed coexistence of thin film and bulk phase of pentacene from SAP and thin film phase of pentacene from DMP precursors. The field effect mobility of 0.031 cm 2 /Vs and threshold voltage of −12.5 V was obtained from OFETs fabricated from SAP precursor, however, the pentacene OFETs from DMP under same preparation yielded high mobility of 0.09 cm 2 /Vs and threshold value decreased to −5 V. It reflects that the mixed phase films had carrier mobilities inferior to films consisting solely of single phase. For comparison, we have also fabricated pentacene OFETs by vacuum evaporation on polycarbonate as the gate dielectric and obtained charge carrier mobilities as large as 0.62 cm 2 /Vs and threshold voltage of −8.5 V. We demonstrated that the spin-coated pentacene using soluble pentacene precursors could be alternative process technology for low cost, large area and low temperature fabrication of OFETs.

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Section: Optical Analysissupporting

confidence: 90%

Section: Introductionmentioning

confidence: 99%

Pentacene Active Channel Layers Prepared by Spin-Coating and Vacuum Evaporation Using Soluble Precursors for OFET Applications

Ochiai

Kumar

Santhakumar

et al. 2012

ISRN Condensed Matter Physics

View full text Add to dashboard Cite

show abstract

“…23 The precursor was synthesized in-house according to literature procedures, 23 or provided by IBM or Sigma-Aldrich. The precursor was dissolved in chloroform ͑15 mg/mL͒, filtered through a 0.2 m PTFE syringe filter, and spun at 1500 rpm for 1 min.…”

mentioning

confidence: 99%

Ambipolar transport in solution-deposited pentacene transistors enhanced by molecular engineering of device contacts

Saudari

Frail

Kagan

2009

Applied Physics Letters

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We report ambipolar transport in bottom gold contact, pentacene field-effect transistors (FETs) fabricated by spin-coating and thermally converting its precursor on a benzocyclobutene/SiO2 gate dielectric with chemically modified source and drain electrodes. A wide range of aliphatic and aromatic self-assembled thiolate monolayers were used to derivatize the electrodes and all enhanced electron and hole currents, yet did not affect the observable thin film morphology. Hole and electron mobilities of 0.1–0.5 and 0.05–0.1 cm2/V s are achieved, though the threshold for electron transport was >80 V. These ambipolar FETs are used to demonstrate inverters with gains of up to 94.

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“…13,6-N-sulfinylacetamidopentacene is soluble in chloroform and has been used to prepare pentacene thin films from spin coating followed by a thermal treatment to convert the precursor film to a film of pentacene, Figure 58. 27,103 In this study a film of the soluble pentacene precursor was deposited over gold IDE substrates. The samples were then placed into the analysis chamber for XPS characterization.…”

Section: Pentacene Conversion On Idementioning

confidence: 99%

Photoelectronic characterization of heterointerfaces.

Brumbach¹

2012

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In many devices such as solar cells, light emitting diodes, transistors, etc., the performance relies on the electronic structure at interfaces between materials within the device. The objective of this work was to perform robust characterization of hybrid (organic/inorganic) interfaces by tailoring the interfacial region for photoelectron spectroscopy. Self-assembled monolayers (SAM) were utilized to induce dipoles of various magnitudes at the interface. Additionally, SAMs of molecules with varying dipolar characteristics were mixed into spatially organized structures to systematically vary the apparent work function. Polymer thin films were characterized by depositing films of varying thicknesses on numerous substrates with and without interfacial modifications. Hard X-ray photoelectron spectroscopy (HAXPES) was performed to evaluate a buried interface between indium tin oxide (ITO), treated under various conditions, and poly(3-hexylthiophene) (P3HT). Conducting polymer films were found to be sufficiently conducting such that no significant charge redistribution in the polymer films was observed. Consequently, a further departure from uniform substrates was taken whereby electrically disconnected regions of the substrate presented ideally insulating interfacial contacts. In order to accomplish this novel strategy, interdigitated electrodes were used as the substrate. Conducting fingers of one half of the electrodes were electrically grounded while the other set of electrodes were electronically floating. This allowed for the evaluation of substrate charging on photoelectron spectra (SCOPES) in the presence of overlying semiconducting thin films. Such an experiment has never before been reported. This concept was developed out of the previous experiments on interfacial modification and thin film depositions and presents new opportunities for understanding chemical and electronic changes in a multitude of materials and interfaces. 4 ACKNOWLEDGMENTSMany people helped with various aspects of this project. I would like to thank

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High-Performance, Solution-Processed Organic Thin Film Transistors from a Novel Pentacene Precursor

Cited by 452 publications

References 18 publications

Pentacene Active Channel Layers Prepared by Spin-Coating and Vacuum Evaporation Using Soluble Precursors for OFET Applications

Pentacene Active Channel Layers Prepared by Spin-Coating and Vacuum Evaporation Using Soluble Precursors for OFET Applications

Ambipolar transport in solution-deposited pentacene transistors enhanced by molecular engineering of device contacts

Photoelectronic characterization of heterointerfaces.

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