Solid-State Electronics
 2008
DOI: 10.1016/j.sse.2007.11.003
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High power density, high efficiency 1W SiGe power HBT for 2.4GHz power amplifier applications

Ping Chun Yeh
1
,
Hwann-Kaeo Chiou
2
,
Chwan Ying Lee
3
et al.
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Cited by 4 publications
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Impact of finger numbers on the performance of proton-radiated SiGe power HBTs at room and cryogenic temperatures

Zheng
1
,
Jiang
2
,
Ma
3
et al. 2018
Microelectronics Reliability
4
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Impact of finger numbers on the performance of proton-radiated SiGe power HBTs at room and cryogenic temperatures

Zheng
1
,
Jiang
2
,
Ma
3
et al. 2018
Microelectronics Reliability
4
0
0
0
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An Improved Noise Model for SiGe HBT With an Inductive Breakdown Network in the Avalanche Region

Lee
1
,
Lin
2
,
Lin
3
2015
IEEE Trans. Device Mater. Relib.
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High-Performance CMOS Power Amplifier With Improved Envelope Tracking Supply Modulator

Park
1
,
Kim
2
,
Kim
3
et al. 2016
IEEE Trans. Microwave Theory Techn.
35
1
13
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