High power laser diode emitted at 2μm

Abstract

GaSb-based InGaSb/AlGaAsSb double quantum well separate confinement heterostructure laser diodes had been grown by molecular-beam-epitaxy. 1000×100 μm2 stripe-type waveguide LDs with facets coated were fabricated and characterized. The high output power of 1.107 W and peak wavelength of 2.09 μm had got with injected current 5 A at working temperature 20℃. The maximum wall plug efficiency was 28.8% with injection current 0.55 A.