High power, nearly diffraction-limited output from a semiconductor laser with an unstable resonator

Tilton, Michael L.; Dente, Gregory C.; Paxton, Alan H.; Cser, Jim; DeFreez, Richard K.; Moeller, C. E.; Depatie, David

doi:10.1109/3.135167

Cited by 81 publications

(16 citation statements)

References 19 publications

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“…In a single broad-area laser diode element, an unstable resonator LD can have a single-peak FFP, but the power output is about several hundred milliwatts [9,10]. In addition, an α-DFB LD that places a diffraction grating at an angle with respect to the direction of light propagation can have a single-peak FFP at 1 W or higher [11].…”

Section: Introductionmentioning

confidence: 99%

Radiation characteristics analysis of broad area laser diodes and the proposal of improvement methods

Morimoto

Toda

Takano

2002

Electron Comm Jpn Pt II

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SUMMARYIn a broad-area laser diode (LD) having a wide stripe width, a Gaussian pattern is not obtained in the near field (NFP) and the far field pattern (FFP) has multiple peaks, which is known as filamentation. Thus, when used in communications, the losses in the side lobes are large, and antenna directivity problems develop. In this paper, we solve the wave motion equation and the dispersion equation to explain the radiation characteristics during filamentation. In particular, we explain the relationship between the phase distribution at the LD facets and the NFP and FFP. We also investigate the improvements in the radiation characteristics by examining the phase distribution at the facets and the injected current distribution in the direction perpendicular to the wave propagation direction. The results showed that the FFP can be a single peak with a side lobe suppression ratio of 13.4 dB when phase correction having two peaks was performed at the facets. The results also showed effective narrowing of the current distribution.

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Section: Introductionmentioning

confidence: 99%

Radiation characteristics analysis of broad area laser diodes and the proposal of improvement methods

Morimoto

Toda

Takano

2002

Electron Comm Jpn Pt II

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“…['i] As depicted in the figure, these resonators are characterized by diverging wavefronts, which we hope will counter the focusing effects of fllamentation. While unstable resonators, when used in conventional near-infrared semiconductor lasers, have led to high single-mode power [19], there are concerns regarding their ability to counter the stronger filamentation tendency in a nitride gain medium. Fiagure 11 compares the unstable resonator field distribution with that of the plane-plane resonator with uncoated facets.…”

Section: Unstable Resonatorsmentioning

confidence: 99%

Analysis of lateral-mode behavior in broad-area InGaN quantum-well lasers

Chow

Amano

2001

IEEE J. Quantum Electron.

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A wave-optical model that is coupled to a microscopic gain theory is used to investigate lateral mode behavior in g-roupIII nitride quantum well lasers.Beam filamentation due to self-focusing in the gain medium is found to limit fundamental-mode output to narrow stripe lasers or to operation close to lasing threshold. Differences between nitride and conventional near-infrared semiconductor lasers arise because of band structure differences, in particular, the presence of a strong quantum-confined Stark effect in the former. Increas-1 ing mirror reflect ivit ies in plane-plane resonators to reduce lasing threshold current tends to exacerbate the il.lamentat.ionproblem. On the other hand: a negati~~branch~stable resonator is fomd to mit,igate~=ent effects: enabling fundamental-mode operation far above threshold in broad-area lasers.

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“…One technique adopted from traditional nondiode lasers is the unstable resonator concept, such as lasers with a curved mirror resonator [4], [5]. Lasers with multiple sections have also been explored to increase the brightness, including master oscillator power amplifier (MOPA) lasers [6], tapered lasers [7], and bow-tie lasers [8].…”

Section: B Approaches For High Power and Brightnessmentioning

confidence: 99%

Design and Simulation of Next-Generation High-Power, High-Brightness Laser Diodes

Lim

Sujecki

Lang

et al. 2009

IEEE J. Select. Topics Quantum Electron.

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Abstract-High-brightness laser diode technology is progressing rapidly in response to competitive and evolving markets. The large volume resonators required for high-power, high-brightness operation makes their beam parameters and brightness sensitive to thermal-and carrier-induced lensing and also to multimode operation. Power and beam quality are no longer the only concerns for the design of high-brightness lasers. The increased demand for these technologies is accompanied by new performance requirements, including a wider range of wavelengths, direct electrical modulation, spectral purity and stability, and phase-locking techniques for coherent beam combining. This paper explores some of the next-generation technologies being pursued, while illustrating the growing importance of simulation and design tools. The paper begins by investigating the brightness limitations of broadarea laser diodes, including the use of asymmetric feedback to improve the modal discrimination. Next, tapered lasers are considered, with an emphasis on emerging device technologies for applications requiring electrical modulation and high spectral brightness.

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High power, nearly diffraction-limited output from a semiconductor laser with an unstable resonator

Cited by 81 publications

References 19 publications

Radiation characteristics analysis of broad area laser diodes and the proposal of improvement methods

Radiation characteristics analysis of broad area laser diodes and the proposal of improvement methods

Analysis of lateral-mode behavior in broad-area InGaN quantum-well lasers

Design and Simulation of Next-Generation High-Power, High-Brightness Laser Diodes

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