High Power Operation of AlGaAs/GaAs Large-Optical-Cavity Laser Diode with ZnSxSe1-x (x=0.06) Layer Grown by Adduct-Source MOCVD Method

Tsunekawa, Yoshifumi; Watanabe, Kimitaka; Seki, T.; Asaka, Tatsuya; Yamasaki, Yasuji; Takamura, Takashi; Iwano, Hideaki

doi:10.7567/ssdm.1989.d-7-3

Extended Abstracts of the 1989 Conference on Solid State Devices and Materials 1989

DOI: 10.7567/ssdm.1989.d-7-3

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High Power Operation of AlGaAs/GaAs Large-Optical-Cavity Laser Diode with ZnSxSe1-x (x=0.06) Layer Grown by Adduct-Source MOCVD Method

Yoshifumi Tsunekawa¹,

Kimitaka Watanabe²,

T. Seki³

et al.

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High Power Operation of AlGaAs/GaAs Large-Optical-Cavity Laser Diode with ZnSxSe1-x (x=0.06) Layer Grown by Adduct-Source MOCVD Method

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