High-power single-transverse-mode ridge optical waveguide semiconductor lasers

Popovichev, V V; Davydova, Evgeniya I; Маrmalyuk, А. А.; Simakov, A. V.; Uspenskii, Mikhail B; Chel'nyi, A A; Bogatov, Alexandr P; Drakin, A E; Plisyuk, S A; Sratonnikov, A. A.

doi:10.1070/qe2002v032n12abeh002352

Cited by 21 publications

(5 citation statements)

References 3 publications

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“…Therefore, due to the finite time of the intraband relaxation, the maximum energy emitted during It is quite obvious that the pulse energy and peak power in the real experiments should be smaller than these maximum values. Note that high power semiconductor lasers with similar geometry and material parameters typically generate powers of around 1 W [30,31].…”

Section: Peak Power and Energy Of Pulsesmentioning

confidence: 99%

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Femtosecond superradiant emission in inorganic semiconductors

Vasil'ev

2009

Rep. Prog. Phys.

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A review of an experimental study of superradiance in semiconductor inorganic structures is presented. It is demonstrated that unique properties of superradiant emission are determined by unusual properties of electrons and holes, namely, the formation of BCS-like state in a system of collectively paired electrons and holes. This can adequately explain all features of superradiance, including its femtosecond pulse duration, record peak power, optical spectrum, spatial and temporal coherency and macroscopically large fluctuations. The effect of non-equilibrium condensation of electrons and holes in the phase domain at room temperature is experimentally demonstrated. The critical temperature of condensation in a strongly degenerate system of electrons and holes is finally theoretically estimated. 4.8. Non-equilibrium condensation of the electrons and holes 12 5. Hypothesis: quasi-stable BCS-like electron-hole state 13 6. Mechanism of metastability of the quasi-equilibrium collective state 14 7. Optical spectra fitting. Parameters of the coherent state 16 8. Mechanism of the formation of the condensate 17 9. Low energy level of the collectively paired e-h pairs 17 10. Critical temperature of condensation in highly degenerate e-h system in the presence of resonant electromagnetic field 18 11. SR of excitonic condensates 20 12. Conclusions 20 Acknowledgment 21 References 22

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Section: Peak Power and Energy Of Pulsesmentioning

confidence: 99%

“…Figure 24 shows the dependence of the critical temperature on the e-h density obtained using condition (30). The characteristic superradiant time τ s is taken to be 1, 1.5 and 2 ps for a carrier density 3 × 10 18 cm −3 .…”

Section: W (Tmentioning

confidence: 99%

Femtosecond superradiant emission in inorganic semiconductors

Vasil'ev

2009

Rep. Prog. Phys.

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“…The AL characteristics of concern for the parameters of LDAs (output wavelengths 940-980 nm) used to pump solid state erbium lasers are studied here. These LDAs are generally based on InGaAs/GaAs/AlGaAs heterostructures with two quantum-dimensional layers of InGaAS with thicknesses d = 5.3 nm [12,13]. The typical cavity length of this kind of LDA is L = 800 μm and the overall width of the LDA is W LDA = 10 mm.…”

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confidence: 99%

Loss coefficient for amplified luminescence of laser diode arrays

et al. 2011

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A system of radiative transfer equations is used to calculate the loss coefficient for amplified luminescence fluxes propagating along and transverse to the cavity axis in the active layer of high-power laser diode arrays taking the spreading of charge carriers in the cladding and contact layers of InGaAs/GaAs/AlGaAs heterostructures into account. It is shown that the spreading of charge carriers leads to a significant change in the amplified luminescence flux which can contribute up to 18% to the lasing threshold of these laser diode arrays. The calculated loss coefficients can greatly simplify the determination of the amplified luminescence fluxes in laser diode arrays with an error of less that 16% and can be used to determine how much the amplified luminescence affects the power and dynamic characteristics of diode arrays.Introduction. High-power laser diode arrays (LDAs) are coming into ever wide use as compact, highly efficient sources of optical excitation for solid state lasers [1][2][3]. Reducing the energy demand by these emitters requires optimization of the parameters of the LDAs, as well as of the solid state lasers. The power of modern LDAs used as pumps is approaching 80-150 W [1, 4]. These relatively high LDA powers have been achieved by substantial increase in the length of the cavities and the total widths of the heterostructure lasing elements. In most cases of practical interest, the LDA is characterized by a relatively high area of the active layer of the laser heterostucture. Thus, it is to be expected that, in accordance with [5-10], intense fluxes of amplified luminescence should develop in the active layers of LDAs; these result in an increase in the threshold and a reduction in the laser output power. It has been shown [5, 6, 8-10] that the AL fluxes for single laser diodes (with a single emitting region, or strip contact) can be analyzed by introducing an AL loss coefficient α lum determined from the balance between emission, amplification, and absorption of spontaneous emission ]11]. The value of α lum depends on many factors, in particular, on the composition of the active layer, the geometry of the laser structure, the excitation conditions, etc. Thus, as opposed to the loss coefficient for the laser emission, finding α lum is a rather complicated task in most cases of practical importance. This paper deals with the determination of the loss coefficient for AL produced in the active layer of highpower LDAs with as many as a few hundred regions. The resulting values of α lum can be used to estimate how much AL affects the threshold, dynamic, and power properties of LDAs and to determine methods for further improvement in the characteristics of LDAs and of diode pumped solid state lasers.Propagation of Fluxes of Amplified Luminescence in LDAs. The AL characteristics of concern for the parameters of LDAs (output wavelengths 940-980 nm) used to pump solid state erbium lasers are studied here. These LDAs are generally based on InGaAs/GaAs/AlGaAs heterostructures with two quantum-dimension...

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“…According to the effective index method, the 2-dimensional waveguide can be treated as two 1-dimensional waveguides twisted by 90 degrees as shown in Fig.1B [3][4][5][6]. In the transverse (y) direction of QCL only TM modes can be generated [9].…”

Section: Theorymentioning

confidence: 99%

Calculation of beam divergence of a quantum cascade laser by effective index method

et al. 2013

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Quantum cascade lasers (QCL's) have proven their usefulness as light sources in many applications, like remote gas sensing, molecular spectroscopy or free-space communication. In most cases the high-quality low-divergence beam is desired. This work presents the theoretical analysis of QCL's beam divergence. The electromagnetic field in the resonator is calculated according to effective index method. Theoretical results are compared with measurements.Keywords: quantum cascade laser, effective index method, beam divergence, far-field pattern.

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High-power single-transverse-mode ridge optical waveguide semiconductor lasers

Cited by 21 publications

References 3 publications

Femtosecond superradiant emission in inorganic semiconductors

Femtosecond superradiant emission in inorganic semiconductors

Loss coefficient for amplified luminescence of laser diode arrays

Calculation of beam divergence of a quantum cascade laser by effective index method

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