High-Precision Fitting of Simulation Parameters for Circuit Aging Effect

Abstract

To take the influence of the aging effect on circuit performance into account at the early design stage, it is necessary to establish an accurate aging simulation model. However, there is a great discrepancy in the reversely deduced MOSFET transistor degradation from the aging model. To deal with that problem, a method is proposed in this paper that establishes the conversion relationship between the simulation parameters and the degradation of MOSFET transistor parameters. The degradation values were converted into model parameters that characterize the aging effect in SPICE, and the results show that aging simulation accuracy was improved to within 0.1%, which would bring great convenience to circuit reliability simulation and analysis. Lastly, we analyze the aging effect on the ring oscillator circuit via the model.