High-Pressure Synthesis, Electron Energy-Loss Spectroscopy Investigations, and Single Crystal Structure Determination of a Spinel-Type Gallium Oxonitride Ga2.79◻0.21(O3.05N0.76◻0.19)

Huppertz, Hubert; Hering, Stefanie A.; Zvoriste, Carmen E.; Lauterbach, Stefan; Riedel, Ralf; Kinski, Isabel

doi:10.1021/cm803371k

Cited by 40 publications

(27 citation statements)

References 39 publications

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“…Ga 3 O 3 N, and REZrO 2 N (RE = Pr, Nd, and Sm) suppressing a release of nitrogen under high pressure in the order of gigapascals [16,17]. Sintering of TaON has been investigated under high pressures of 3 and 5.5 GPa at temperatures above 900 °C using a belt-type high pressure apparatus, while the green compacts were not densified but were oxidized to Ta 2 O 5 during HIPping in Ar [18,19].…”

Section: Introductionmentioning

confidence: 99%

High pressure densification and dielectric properties of perovskite-type oxynitride SrTaO2N

Masubuchi

Kawamura

Taniguchi

et al. 2015

Journal of the European Ceramic Society

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Perovskite-type SrTaO 2 N was densified using a belt-type high pressure apparatus at 2.5-7.7 GPa with and without sample heating. The relative density of the samples treated at 2.5 GPa was 64% and was increased to 75% in those treated at 7.7 GPa without sample heating. The color of the compact changed from orange to brown with densification and the crystals were fractured to nanometer size grains. The density was increased up to 86% with heating above 800 °C at 7.7 GPa and the sample color changed to black, accompanied by electrically conductive nature. The permittivity of compacts that were densified to a relative density of around 75% with heating at 600 °C and without sample heating were 200 and 90 at 100 Hz, respectively.

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Section: Introductionmentioning

confidence: 99%

High pressure densification and dielectric properties of perovskite-type oxynitride SrTaO2N

Masubuchi

Kawamura

Taniguchi

et al. 2015

Journal of the European Ceramic Society

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“…54),55) Spinel type gallium oxynitride including both gallium ions and anion vacancies were obtained by high pressure synthesis. 56) Gallium oxynitride (GaON) with a wurtzite-like structure was firstly prepared by ammonolysis of NiGa 2 O 4 .…”

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confidence: 99%

Synthesis, structure and properties of new functional oxynitride ceramics

Masubuchi

2013

J. Ceram. Soc. Japan

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Novel metal oxynitrtides have been prepared by nitridation of amorphous metal oxide precursors obtained through citrate route. Their crystal structure, especially in O/N distribution and local bonding characteristics has been analyzed by using neutron diffraction, X-ray absorption and transmission electron microscopy, to investigate their electric and optical properties. In dielectric SrTaO 2 N, crystal structure refinement suggested the short range O/N ordering and local tilting of cis-TaO 4 N 2 octahedra, resulting in its unusual large permittivity. Its dense ceramics were sintered with SrCO 3 additive and exhibited superior dielectric constant above 1 © 10 4 at room temperature. New biphasic wurtzite and zinc-blende structure of gallium oxynitride nanowire was observed by using transmission electron microscopy. As-grown long gallium oxynitride nanowire exhibited a characteristic broad UV emission at 4.3 eV in its cathodoluminescene spectrum. New oxynitride phosphor having magnetoplumbite structure, LaAl 12 (O,N) 19 :Eu showed photoluminescence emission peak splitting due to Eu 2+ site splitting to two crystallographic sites induced by the two kinds of anions in its crystal structure.

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“…Several studies were carried out regarding ternary nitrides/oxonitrides [6][7][8][9][10][11][12][13][14][15] in an effort to tailor the highly desirable mechanical and electronic properties associated with spinel nitrides to suit specific applications.…”

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confidence: 99%

“…al. 16 , and has since been synthesized recently by several groups 12,14,17 . The large amount of interest in this material is due to the wide spread use of its precursors, w -GaN and β-Ga 2 O 3 .…”

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Anion ordering in spinel-type gallium oxonitride

et al. 2011

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The specific locations of the anions -nitrogen and oxygen -in the crystallographic sites are not known in the spinel-type gallium oxonitride. We report here on an indirect method for determining the specific location of the light elements, N and O, in a defect spinel-structured gallium oxonitride, Ga2.79O3.05N0.76. The locations of elements that are adjacent in the periodic table (∆Z = ±1) are indistinguishable with conventional XRD techniques. However, by examining the local electronic structure we show that the anions are spatially ordered such that, R3m (No. 166) is the most appropriate defect free space group. Finally, we have determined experimentally the electronic band gap of Ga2.79O3.05N0.76 to be 2.95 ± 0.30, agreeing with our calculated value of 2.79 eV (direct) for Ga3O3N using MBJLDA.

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High-Pressure Synthesis, Electron Energy-Loss Spectroscopy Investigations, and Single Crystal Structure Determination of a Spinel-Type Gallium Oxonitride Ga_2.79◻_0.21(O_3.05N_0.76◻_0.19)

Cited by 40 publications

References 39 publications

High pressure densification and dielectric properties of perovskite-type oxynitride SrTaO2N

High pressure densification and dielectric properties of perovskite-type oxynitride SrTaO2N

Synthesis, structure and properties of new functional oxynitride ceramics

Anion ordering in spinel-type gallium oxonitride

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