High-quality vertically aligned ZnO nanorods synthesized by microwave-assisted CBD with ZnO–PVA complex seed layer on Si substrates

Hassan, J.J.; Hassan, Z.; Abu-Hassan, H.

doi:10.1016/j.jallcom.2011.03.153

Cited by 85 publications

(18 citation statements)

References 63 publications

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“…The ZnO nanostructure deposited at 400°C exhibited lower strain after annealing compared with the other samples. The considerably low compressive strains obtained after annealing (-0.038 and -0.057%) suggest that the synthesized ZnO nanostructures have high crystal qualities [24]. These values are comparable to those obtained by Hassan et al [24] for ZnO nanorods prepared by microwave-assisted chemical bath deposition.…”

Section: Resultssupporting

confidence: 79%

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Annealing Effects on the Structural, Optical, and UV Photoresponse Properties of ZnO Nanostructures Prepared by RF-Magnetron Sputtering at Different Deposition Temperatures

Al-Salman

Abdullah

2014

Acta Metall. Sin. (Engl. Lett.)

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Undoped ZnO nanostructures were deposited on SiO 2 /Si substrates via radio frequency magnetron sputtering at different deposition temperatures (room temperature, 200, 300, and 400°C). The prepared samples were annealed at 500°C for 2 h under an N 2 flow. The structural, surface morphological, optical, and photoresponse characteristics of ZnO nanostructures as deposited and after annealing were then investigated. The energy bandgaps of all samples after annealing (3.22-3.28 eV) decreased compared with those of the as-deposited specimens. The barrier height increased when the deposition temperature increased and reached 0.77 eV at 400°C after annealing with a leakage current of 0.17 lA at a 5 V bias. The UV photodetector device which was deposited at the optimal temperature of 300°C, has 12.51 9 10 3 % photosensitivity, 2.259 lA dark current, 0.508 s response time, and 0.466 s recovery time. The dark current significantly decreased for all samples after annealing. The proposed UV photodetectors exhibit high performance, high photosensitivity, shorter response and recovery times, and excellent stability at lower bias voltages of 5 and 2 V.

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Section: Resultssupporting

confidence: 79%

“…The strains (e zz ) along the c-axis of the ZnO nanostructure were calculated using the following formula [24]:…”

Section: Resultsmentioning

confidence: 99%

Annealing Effects on the Structural, Optical, and UV Photoresponse Properties of ZnO Nanostructures Prepared by RF-Magnetron Sputtering at Different Deposition Temperatures

Al-Salman

Abdullah

2014

Acta Metall. Sin. (Engl. Lett.)

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“…where cis the lattice constant of the strained calculated from XRD data, and c o is the Growth of Zinc Oxide Nanocombs on Porous Silicon Layer by Thermalgrown on the PS peak at 2θ = 69.09º, diffraction peak at the ZnOnanocomb, which indicates that the ZnO nanocombs oriented along the c-axis vertical diffraction peak at 44.35º is related the XRD sample holder [23].…”

Section: Sem Images Of (A) Ps Layers (B) Zno Nanocombs/ps Layermentioning

confidence: 99%

Growth of Zinc Oxide Nanocombs on Porous Silicon Layer by Thermal-Evaporation Method

Salman¹

2015

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Zinc oxide (ZnO) film was deposited on a porous silicon (PS) layer prepared by electrochemical etching through the thermal-evaporation method. ZnO nanocombs structure arrays were directly fabricated on the PS substrate through zinc powder evaporation, which uses a simple thermal-evaporation method without a catalyst. The ZnO nanocombs were highly oriented along the c-axis perpendicular to the PS layer. The average crystallite size of the PS and the ZnO nanocombs were 17.06 and 17.94 nm, respectively. The photoluminescence emission spectra of the ZnO nanocombs grown on the PS layer showed three emission peaks. The two peaks located at 387.5 and 605 nm were caused by the ZnO nanocombs, whereas the third peak located at 637.5 nm was caused by the PS layer. The ZnO nanocombs grown on the PS layer exhibited exceptional light trapping at wavelengths ranging from 400 to 1000 nm, which was expected to increase the efficiency of nano-electronic and nano-optical devices such as (solar cells).

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“…One-dimensional (1D) semiconductor nanostructures have recently become widely used because of their special properties: quantum confinement, high surface-to-volume ratio, high optical gain, fast response, and specific crystalline orientation [1][2][3]. Ternary II-VI semiconductor materials have attracted more interest than binary compounds because some of their properties, such as their tunable optical properties, are better than those of binary compounds.…”

Section: Introductionmentioning

confidence: 99%

High-Quality ZnCdS Nanosheets Prepared Using Solvothermal Synthesis

Mahdi

Hassan

et al. 2013

Journal of Nanoscience

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For the first time, Zn Cd 1− S nanosheets with different Zn and Cd ion concentrations were prepared using solvothermal synthesis at 200 ∘ C for 4 and 24 h. The crystalline structure of the nanosheets was wurtzite. The optical band gaps of the nanosheets increased with increasing Zn ratio; this increase is consistent with the band gaps estimated using Vegard's formula. The photoluminescence spectra for the 24 h nanosheets had higher emission intensities than those for the 4 h nanosheets. The emission band corresponding to intrinsic near-band-edge emission and a broad peak associated with extrinsic deep-level emission were observed in the photoluminescence spectra.

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High-quality vertically aligned ZnO nanorods synthesized by microwave-assisted CBD with ZnO–PVA complex seed layer on Si substrates

Cited by 85 publications

References 63 publications

Annealing Effects on the Structural, Optical, and UV Photoresponse Properties of ZnO Nanostructures Prepared by RF-Magnetron Sputtering at Different Deposition Temperatures

Annealing Effects on the Structural, Optical, and UV Photoresponse Properties of ZnO Nanostructures Prepared by RF-Magnetron Sputtering at Different Deposition Temperatures

Growth of Zinc Oxide Nanocombs on Porous Silicon Layer by Thermal-Evaporation Method

High-Quality ZnCdS Nanosheets Prepared Using Solvothermal Synthesis

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