High-resolution shadow-mask patterning in deep holes and its application to an electrical wafer feed-through

Burger, G.J.; Smulders, Edwin; Berenschot, J.W.; Lammerink, Theodorus S.J.; Fluitman, J.H.J.; Imai, Satomitsu

doi:10.1016/s0924-4247(97)80035-0

Cited by 48 publications

(25 citation statements)

References 3 publications

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“…Electrical feedthroughs in hermetic cavities are always challenging. Two possible configurations are vertical and lateral feedthroughs [25,26], but for the TEM nanoreactor the latter ones are more adequate. Lateral electrical feedthroughs allow the contact pads to be placed in the desired position and make use of standard batch fabrication steps.…”

Section: Electrical Feedthroughsmentioning

confidence: 99%

Wafer-level assembly and sealing of a MEMS nanoreactor forin situmicroscopy

Mele

Santagata

Pandraud

et al. 2010

J. Micromech. Microeng.

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This paper presents a new process for the fabrication of MEMS-based nanoreactors for in situ atomic-scale imaging of nanoparticles under relevant industrial conditions. The fabrication of the device is completed fully at wafer level in an ISO 5 clean room and it is based on silicon fusion bonding and thin film encapsulation for sealed lateral electrical feedthroughs. The fabrication process considerably improves the performances of previous nanoreactors. The wafer-level assembly allows faster preparation of devices, hydrocarbon contamination is no longer observed and the control of the channel height leads to a better flow reproducibility. The channel is shown to be sufficiently hermetic to work in the vacuum of a transmission electron microscope while a pressure of 100 kPa is maintained inside the nanoreactor. The transparency is demonstrated by the atomic scale imaging of YBCO nanoparticles, with a line spacing resolution of 0.19 nm.

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Section: Electrical Feedthroughsmentioning

confidence: 99%

Wafer-level assembly and sealing of a MEMS nanoreactor forin situmicroscopy

Mele

Santagata

Pandraud

et al. 2010

J. Micromech. Microeng.

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“…This dry film is extremely pliable, which enables tenting Beside planarization, other application areas of the dry of large tooling holes. In the used two-roll laminator setfilms are shadow masking [ 6 ] and thick resist patterning up the substrate is sandwiched between two dry films, at with perpendicular side walls [7]. This pattern could be a pressure of 3.5 kg cm-2, 12S°C roller temperature, and applied as a mould for electroplating.…”

Section: Dry Film Photoresistmentioning

confidence: 99%

Planarization and fabrication of bridges across deep grooves or holes in silicon using a dry film photoresist followed by an etch back

Spiering

Berenschot

Elwenspoek

1995

J. Micromech. Microeng.

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Abstract. A technique is presented that provides planarization after a very deep etching step in silicon. This offers the possibility for not only resist spinning and layer patterning but also for realization of bridges and cantilevers across deep grooves or holes. The technique contains a standard dry film lamination step to cover a wafer with a 38 p m thick foil. Next the foil is etched back to the desired thickness of a few micrometres. This thin film facilitates resist spinning and high-resolution patterning. The planarization method is demonstrated by the fabrication of aluminium bridges across a deep groove in silicon.

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“…This is the situation in the case of the deposition of a thin layer of low-stress material, or if the membrane contains equally sized and spaced apertures i.e., sieves, making the stencil intrinsically stable. In this situation, the dimensions and shape of the deposited surface patterns can be described by a simple model based on geometrical considerations [21]. The second image [see Fig.…”

Section: Introductionmentioning

confidence: 99%

Silicon-Supported Membranes for Improved Large-Area and High-Density Micro/Nanostencil Lithography

Boogaart

Doeswijk

Brugger

2006

J. Microelectromech. Syst.

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Abstract-In this paper, the fabrication and use of stencils for full-wafer scale shadow mask (stencil) lithography is described. The stencils fabricated via microelectromechanical systems are mechanically stabilized and show clearly reduced stress-induced membrane deformation, which translates into a more accurate surface pattern definition. Solid-state SiN membranes 500 nm thick and up to 1 mm 2 in size having a 20-m-thick silicon support rim following the outline of the stencil apertures were fabricated in a 100-mm Si wafer. The minimum aperture size presented in this paper is 3 m. The increase of membrane stability was confirmed by depositing a highly stressed 35-nm-thick chrome layer. The results demonstrate a stability increase of the Si-supported compared to nonsupported membrane with identical shape by up to 89% as measured by the reduced out-of-plane deflection of overhanging membrane sections. Comparison by scanning electron microscopy and atomic force microscopy of the resulting micropatterns obtained by Cr deposition through both unsupported and Si-rim supported stencils shows better edge sharpness and clearer spatial details for surface patterns deposited through the stabilized stencil compared to those deposited through the nonsupported stencil. The improved stabilized stencils allow for large-area high-density surface patterning while maintaining membrane stability and pattern definition during stencil lithography.[

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High-resolution shadow-mask patterning in deep holes and its application to an electrical wafer feed-through

Cited by 48 publications

References 3 publications

Wafer-level assembly and sealing of a MEMS nanoreactor forin situmicroscopy

Wafer-level assembly and sealing of a MEMS nanoreactor forin situmicroscopy

Planarization and fabrication of bridges across deep grooves or holes in silicon using a dry film photoresist followed by an etch back

Silicon-Supported Membranes for Improved Large-Area and High-Density Micro/Nanostencil Lithography

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