High Responsivity and Ultra-Low Detection Limits in Nonlinear a-Si:H p-i-n Photodiodes Enabled by Photogating

Bablich, Andreas; Müller, Maurice; Bornemann, Rainer; Nachtigal, Andreas; Haring Bolívar, Peter

doi:10.1007/s13320-023-0689-6

Cited by 4 publications

(3 citation statements)

References 37 publications

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“…In ref. 45 , IPD sensitivities of 744 mAW −1 have been reported at blue wavelength enabled by photogating with as used in this work. That sensitivity depends on the gating irradiance and wavelength and can exceed benchmarks of conventional crystalline silicon p-n or p-i-n junction photodetectors (e.g.…”

Section: Resultsmentioning

confidence: 91%

Amorphous silicon intrinsic photomixing detector for optical ranging

Bablich,

Müller,

Bornemann

et al. 2023

Commun Eng

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Today’s optical range finders or 3D imagers suffer from significant drawbacks and do not allow to combine performance (sensitivity, precision) with simplicity, and scalability enabling very-large scale integration with minimum footprint. Here, we present the amorphous silicon Intrinsic Photomixing Detector (IPD) for direct and highly sensitive optical envelope mixing. The ability to generate a photocurrent that is proportional to the nonlinear mixing of two optical modulation envelope functions enables high performance Time-of-Flight optical ranging at low light levels down to $$\sim \!0.1\,{{{{{\rm{mW}}}}}}{{{{{\rm{cm}}}}}}^{-2}$$ ~ 0.1 mW cm − 2 at $$444\,{{{{{\rm{nm}}}}}}$$ 444 nm . The IPD exceeds MHz bandwidth, covers a broad distance detection range from $$10\,{{{{{\rm{cm}}}}}}$$ 10 cm to $$101\,{{{{{\rm{m}}}}}}$$ 101 m , and achieves a mean depth resolution below $$44\,{{{{{\rm{mm}}}}}}$$ 44 mm for distances up to $$25\,{{{{{\rm{m}}}}}}$$ 25 m . The IPD paves the way towards simple but high-performance photodetectors that allow for very-large scale integration on top of silicon or flexible electronics at low costs with pixel fill factors up to 100%.

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Section: Resultsmentioning

confidence: 91%

Amorphous silicon intrinsic photomixing detector for optical ranging

Bablich,

Müller,

Bornemann

et al. 2023

Commun Eng

Self Cite

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“…Photo-gating is one of the best methods to provide enhanced gain due to the fact that a single photon-generated carrier will have modality over the path of the semiconductor. The crosstalk between storing and decay may result in an increase in power and delay the reaction due to the dynamics of charge trapping and detrapping, i.e., the slower the charge trapping and detrapping process is, the longer it takes to store and decay [50].…”

Section: The Underlying Physical Mechanisms Of Photodetectorsmentioning

confidence: 99%

Recent advancements and progress in development in chalcogenide (S, Se)-based thin films for high-performance photodetectors: a review

Alanazi,

Alzaidy

2024

Phys. Scr.

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Scientific and technical communities often debate photodetection as a significant technology due to its unquestionable and extensive usage in business and research. Traditional bulk semiconductors like GaN, Si, and InGaAs are being used less and less for photodetection in industry because they aren’t mechanically stable or flexible enough, they have expensive substrates, and charge carriers can’t move around freely enough. Nonetheless, 2D materials such as transition-metal nitrides, chalcogenides, and carbides, in addition to graphene, are leading the path toward achieving more sophisticated results and surpassing the limitations imposed by traditional semiconductors. This is due to their exceptional electronic and mechanical properties, which include flexibility, adjustable bandgaps, high mobilities, and ample potential for constructing heterojunctions of chalcogenides-based thin films. Given the recent surge in photodetection research, the field has expanded significantly and requires a systematic compilation of pertinent scientific knowledge. A comprehensive study must address many aspects of chalcogenides-based thin film manufacturing strategies, assembly procedures, device integration, spectral properties, heterojunction potential, and future research prospects. This paper specifically examines the use of chalcogenides-based thin film materials in photodetection. These areas include solar-blind, visible, near-infrared, and broadband detectors. We have expanded our discussion to include photodetector performance parameters and how the latest chalcogenides-based thin films formed by combining ordinary semiconductors have resulted in high-performance UV, visible, and IR range photodetection. These materials have the potential to be used as photodetectors. Ultimately, we provide a comparative demonstration of the performance characteristics of photodetectors, offering a distinct assessment of the suitability of these materials for use in the advancement of next-generation photodetectors.

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“…Their high efficiency, coupled with reasonable production costs, has contributed to their recognition in various optoelectronic applications. These a-Si:H photodiodes are characterized by their heightened sensitivity within the visible spectrum and rapid response times, making them well-suited for capturing light in real-time scenarios [33].…”

Section: Introductionmentioning

confidence: 99%

Monolithic Integration of Semi-Transparent and Flexible Integrated Image Sensor Array with a-IGZO Thin-Film Transistors (TFTs) and p-i-n Hydrogenated Amorphous Silicon Photodiodes

Choi,

Seo,

Yoon

et al. 2023

Nanomaterials

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A novel approach to fabricating a transparent and flexible one-transistor–one-diode (1T-1D) image sensor array on a flexible colorless polyimide (CPI) film substrate is successfully demonstrated with laser lift-off (LLO) techniques. Leveraging transparent indium tin oxide (ITO) electrodes and amorphous indium gallium zinc oxide (a-IGZO) channel-based thin-film transistor (TFT) backplanes, vertically stacked p-i-n hydrogenated amorphous silicon (a-Si:H) photodiodes (PDs) utilizing a low-temperature (<90 °C) deposition process are integrated with a densely packed 14 × 14 pixel array. The low-temperature-processed a-Si:H photodiodes show reasonable performance with responsivity and detectivity for 31.43 mA/W and 3.0 × 1010 Jones (biased at −1 V) at a wavelength of 470 nm, respectively. The good mechanical durability and robustness of the flexible image sensor arrays enable them to be attached to a curved surface with bending radii of 20, 15, 10, and 5 mm and 1000 bending cycles, respectively. These studies show the significant promise of utilizing highly flexible and rollable active-matrix technology for the purpose of dynamically sensing optical signals in spatial applications.

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High Responsivity and Ultra-Low Detection Limits in Nonlinear a-Si:H p-i-n Photodiodes Enabled by Photogating

Cited by 4 publications

References 37 publications

Amorphous silicon intrinsic photomixing detector for optical ranging

Amorphous silicon intrinsic photomixing detector for optical ranging

Recent advancements and progress in development in chalcogenide (S, Se)-based thin films for high-performance photodetectors: a review

Monolithic Integration of Semi-Transparent and Flexible Integrated Image Sensor Array with a-IGZO Thin-Film Transistors (TFTs) and p-i-n Hydrogenated Amorphous Silicon Photodiodes

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