High sensitivity chemically amplified EUV resists through enhanced EUV absorption

Ongayi, Owendi; Christianson, Matthew D.; Meyer, Matthew M.; Coley, Suzanne M.; Valeri, David; Kwok, Amy; Wagner, Mike; Cameron, Jim; Thackeray, Jim

doi:10.1117/12.916482

Cited by 23 publications

(17 citation statements)

References 6 publications

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“…Fluorinated polymers have been investigated as the backbone polymers of EUV resists owing to the large photoabsorption cross section of fluorine atoms. [79][80][81] However, the development of high-absorption resists based on fluorinated polymers still requires further efforts, because the change in backbone polymers significantly affects acid generation, acid diffusion, catalytic chain reaction, and dissolution. 82,83) Recently, hafnium oxide resists have attracted much attention because of their high EUV absorption and etching resistance.…”

Section: Absorption Enhancementmentioning

confidence: 99%

Resist Materials and Processes for Extreme Ultraviolet Lithography

Itani¹,

Kozawa

2012

Jpn. J. Appl. Phys.

166

153

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Extreme ultraviolet (EUV) radiation, the wavelength of which is 13.5 nm, is the most promising exposure source for next-generation semiconductor lithography. The development of EUV lithography has been pursued on a worldwide scale. Over the past decade, the development of EUV lithography has significantly progressed and approached its realization. In this paper, the resist materials and processes among the key technologies of EUV lithography are reviewed. Owing to its intensive development, the resist technology has already closely approached the requirements for the 22 nm node. The focus of the development has shifted to the 16 nm node and beyond. Despite the trade-off relationships among resolution, line edge roughness/line width roughness, and sensitivity, the capability of resist technology will go beyond the 16 nm node.

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Section: Absorption Enhancementmentioning

confidence: 99%

Resist Materials and Processes for Extreme Ultraviolet Lithography

Itani¹,

Kozawa

2012

Jpn. J. Appl. Phys.

166

153

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“…This resist is based on the low Rmax concept described herein coupled with some of our other novel approaches discussed previously. [9,[16][17][18] …”

Section: Resist Mottling and Rls Improvementsmentioning

confidence: 99%

“…[15] In the recent past we have reported on progress in the following areas: EUV polymer synthesis, [16] EUV sensitization, [17] CDU-sensitivity improvement, [9] leaving group design [18] and molecular resists. [19] In this paper, we will update on our progress in the critical area of RLS and RCS performance.…”

Section: Introductionmentioning

confidence: 99%

Progress Towards Production Worthy EUV Photoresists: Balancing Litho, Outgassing and OOB Performance

Cameron¹,

Thackeray²,

Jain³

et al. 2014

J. Photopol. Sci. Technol.

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Implementation of EUV Lithography (EUVL) for device high volume manufacturing (HVM) requires advanced photoresists capable of meeting the criteria of advanced logic and memory design rules. To achieve the level of performance required, resists must show excellent performance in terms of resolution, LWR (or CDU) and sensitivity. In addition, resists must meet the outgassing criteria required for HVM on the NXE toolset. Lastly, it is anticipated that resists with low OOB sensitivity will also be required.In this paper, we describe our progress in all of these areas. Based on our results, we believe we are on track to deliver production worthy resists for the EUVL era.

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“…As a brief conclusion, current EUV resists and processes have serious limitations on high volume manufacturing because industry requires both high resolution below 15 nm hp and high sensitivity below 20 mJ/cm 2 . Key approach to improve this tradeoff relationship is increasing photo-activated materials during exposure to mitigate stochastic effects by PSN, hence many researchers have investigated metal containing resist to increase EUV absorption coefficient [12][13][14][15]. Although another method to overcome PSN is applying smoothing process [10], this approach is typically not acceptable with respect to resolution.…”

Section: Introductionmentioning

confidence: 99%

Negative-tone Imaging with EUV Exposure toward 13 nm hp

Tsubaki

Nihashi

Tsuchihashi

et al. 2016

J. Photopol. Sci. Technol.

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Negative-tone imaging (NTI) with EUV exposure has major advantages with respect to line-width roughness (LWR) and resolution due in part to polymer swelling and favorable dissolution mechanics. In NTI process, both resist and organic solvents play important roles in determining lithography performances. The present study describes novel chemically amplified resist materials based on NTI technology with EUV using specific organic solvents. Lithographic performances of NTI process were described in this paper under exposures using ASML NXE:3300 EUV scanner at imec. It is emphasized that 14 nm hp was nicely resolved under exposure dose of 37 mJ/cm 2 without any bridge and collapse, which are attributed to the low swelling character of NTI process. Although 13 nm hp resolution was potentially obtained, a pattern collapse still restricts its resolution in case coating resist film thickness is 40 nm. Dark mask limitation due mainly to mask defectivity issue makes NTI with EUV favorable approach for printing block mask to produce logic circuit. A good resolution of CD-X 21 nm/CD-Y 32 nm was obtained for block mask pattern using NTI with usable process window and dose of 49 mJ/cm 2 . Minimum resolution now reaches CD-X 17 nm / CD-Y 23 nm for the block. A 21 nm block mask resolution was not affected by exposure dose and explored toward low dose down to 18 mJ/cm 2 by reducing quencher loading. In addition, there was a negligible amount of increase in LCDU for isolated dot pattern when decreasing exposure dose from 66 mJ/cm 2 to 24 mJ/cm 2 . On the other hand, there appeared tradeoff relationship between LCDU and dose for dense dot pattern, indicating photon-shot noise restriction, but strong dependency on patterning features. Design to improve acid generation efficiency was described based on acid generation mechanism in traditional chemically amplified materials which contains photoacid generator (PAG) and polymer. Conventional EUV absorber which comprises of organic compounds is expected to have 1.6 times higher EUV absorption than polyhydroxystyrene based on calculation. However, observed value of acid amount was comparable or significantly worse than polyhydroxystyrene.

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High sensitivity chemically amplified EUV resists through enhanced EUV absorption

Cited by 23 publications

References 6 publications

Resist Materials and Processes for Extreme Ultraviolet Lithography

Resist Materials and Processes for Extreme Ultraviolet Lithography

Progress Towards Production Worthy EUV Photoresists: Balancing Litho, Outgassing and OOB Performance

Negative-tone Imaging with EUV Exposure toward 13 nm hp

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