High Sensitivity Polymer Visible‐Near Infrared Photodetectors via an Inverted Device Structure and Manipulation of Injection Barrier Height

Wu, Siping; Xiao, Biao; Zhao, Baofeng; He, Zhicai; Wu, Hongbin; Cao, Yong

doi:10.1002/smll.201600721

Cited by 53 publications

(52 citation statements)

References 29 publications

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“…Several different low bandgap polymer/electron acceptor systems have been tested in organic photodetectors. [ 54–56 ] Also non‐fullerene acceptors have already proven to be useful in organic photodetectors. Y. Cao and coworkers reported a detectivity of 2 × 10 13 cm Hz 1/2 W −1 for a detector made of a polymer from the PTB‐family and NFA.…”

Section: Applicationsmentioning

confidence: 99%

Low Band Gap Conjugated Semiconducting Polymers

Scharber

Sariciftci

2021

Adv Materials Technologies

168

104

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Important parameters of an organic semiconductor material are the electronic band gap (Eg) and the position of highest occupied and lowest unoccupied bands versus vacuum. These bands are called valence and conduction band for inorganic semiconductors. For organic semiconductors the bands defining the band gap are often called highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO). One advantage of semiconducting polymers is the ability to tune the band gap and the position of HOMO and LUMO levels by molecular chemical design. The organic photovoltaic solar cells need absorbers with a smaller bandgap to maximize the power conversion efficiency of these devices. There are several chemical strategies to synthesize low band gap polymers for optoelectronic applications. In this manuscript, an updated overview on the current status of these low band gap conjugated polymers will be given. The design principles of low band gap polymers, the properties of the resulting materials, and important applications and devices realized with this material class will be briefly discussed.

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Section: Applicationsmentioning

confidence: 99%

Low Band Gap Conjugated Semiconducting Polymers

Scharber

Sariciftci

2021

Adv Materials Technologies

168

104

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“…The common configurations of photodiodes can be categorized as the conventional and inverted type, in which the presence of interface layers is considered to effectively reduce the dark current for obtaining high detectivity, accompanied by low noise equivalent power (NEP) and large linear dynamic range (LDR). For photodiodes based on photovoltaic effect, an absorbed photon can generate at best one electron‐hole pair, resulting in the EQE of <100% . The collection of photogenerated carriers is assisted by the built‐in potential in the junction, which results from different work functions between anode and cathode.…”

Section: Fundamentals Of Photodetectorsmentioning

confidence: 99%

“…For photodiodes based on photovoltaic effect, an absorbed photon can generate at best one electron-hole pair, resulting in the EQE of <100%. [119][120][121][122][123][124][125][126][127][128] The collection of photogenerated carriers is assisted by the builtin potential in the junction, which results from different work functions between anode and cathode. And thus the external reverse bias is often used to improve charge collection efficiency.…”

Section: Photodiodementioning

confidence: 99%

Recent Progress on Photomultiplication Type Organic Photodetectors

Miao

Zhang

2018

Laser & Photonics Reviews

222

182

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Photodetectors as a significant unit of intelligent optoelectronic systems have stimulated immense attention from multidisciplinary areas. Photomultiplication (PM) is desirable for sensitive photodetectors with strong detection capability of weak light, which can further simplify the photo‐detection systems without pre‐amplifier circuit. For organic photodetectors (OPDs), PM phenomenon cannot be realized by utilizing the principle of avalanche effect or impact ionization as in inorganic materials, stemming from organic semiconductor materials with large exciton binding energy and disordered structure. In this review, the recent progress on PM type OPDs is comprehensively summarized from the perspective of device physics and material science. Charge tunneling injection induced by interfacial traps becomes the mainstream working mechanism for obtaining PM phenomenon. A series of PM type OPDs was achieved by utilizing interfacial blocking layer and introducing trap states into active layer or interfacial layer. The filter‐free PM type narrowband OPDs are realized by combining the concept of charge injection narrowing with the mechanism of PM. Meanwhile, further development on this hot topic is proposed and fully discussed, including multifunctional OPDs, organic–inorganic hybrid photodetectors, and photodetector systems.

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“…Recently much effort has been made in the development of polymer photodiodes with broad spectral response, mainly through the design and synthesis of new donor‐type polymers, acceptor, and interlayer materials and modification of device structures . In 2015, Zhang et al reported polymer photodiodes with low dark current using donor polymers with the 3,4‐ethylenedioxythiophene moiety as side chains .…”

Section: Introductionmentioning

confidence: 99%

Low‐Bandgap Polymers for High‐Performance Photodiodes with Maximal EQE near 1200 nm and Broad Spectral Response from 300 to 1700 nm

Han

Yang

et al. 2018

Advanced Optical Materials

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Polymer photodiodes with broad spectral response above 1500 nm can be used for imaging in the near‐infrared window of the atmosphere. Three low‐bandgap polymers based on 3,6‐dithiophen‐2‐yl‐2,5‐dihydropyrrolo[3,4‐c]pyrrole‐1,4‐dione (DPP), [1,2,5]thiadiazolo[3,4‐g]quinoxaline (TQ), benzobisthiadiazole (BBT), and dithienopyrrole (DTP) are designed and synthesized. No‐gain and gain polymer photodiodes with polymers:PC71BM as active layer materials and with aluminum doped ZnO nanoparticles:2,9‐bis(3‐(dimethylamino)propyl)anthra[2,1,9‐def:6,5,10‐d′e′f′]diisoquinoline‐1,3,8,10(2H,9H)‐tetraone (AZO:PDIN), MoO3, and 2,9‐dimethyl‐4,7‐diphenyl‐1,10‐phenanthroline (BCP) as interlayer materials are prepared. No‐gain photodiodes based on polymer P1 exhibit the external quantum efficiency (EQE) of 7.8% at 1200 nm, which is among the best values of polymer photodiodes known to date. Gain photodiodes based on P1 and P3 also exhibit a maximal EQE near 1200 nm. In addition, gain photodiodes based on P1 have a specific detectivity over 1013 Jones in 300–1360 nm and spectral response in the region of 300–1700 nm.

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High Sensitivity Polymer Visible‐Near Infrared Photodetectors via an Inverted Device Structure and Manipulation of Injection Barrier Height

Cited by 53 publications

References 29 publications

Low Band Gap Conjugated Semiconducting Polymers

Low Band Gap Conjugated Semiconducting Polymers

Recent Progress on Photomultiplication Type Organic Photodetectors

Low‐Bandgap Polymers for High‐Performance Photodiodes with Maximal EQE near 1200 nm and Broad Spectral Response from 300 to 1700 nm

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