High-Sensitivity Temperature Measurement With Miniaturized InSb Mid-IR Sensor

Camargo, Edson Gomes; Ueno, K.; Morishita, Tetsuya; Satō, Masayuki; Endo, H.; Kurihara, Masaaki; Ishibashi, K.; Kuze, Naohiro

doi:10.1109/jsen.2007.902948

Cited by 21 publications

(16 citation statements)

References 12 publications

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“…Kuze et al [22,23] have developed a novel microchip−sized InSb photodiode sensor, on semi−insulating GaAs(100) substrate. The sensor consists of 910 photo− diodes connected in series (see InSb photovoltaic sensor can be used both in non−con− tact thermometry, as well as human body detection.…”

Section: Sb-based Iii-v Photodetectorsmentioning

confidence: 99%

HOT infrared photodetectors

Martyniuk

Rogalski

2013

Opto-Electronics Review

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At present, uncooled thermal detector focal plane arrays are successfully used in staring thermal imagers. However, the performance of thermal detectors is modest, they suffer from slow response and they are not very useful in applications requiring multispectral detection.Infrared (IR) photon detectors are typically operated at cryogenic temperatures to decrease the noise of the detector arising from various mechanisms associated with the narrow band gap. There are considerable efforts to decrease system cost, size, weight, and power consumption to increase the operating temperature in so-called high-operating-temperature (HOT) detectors. Initial efforts were concentrated on photoconductors and photoelectromagnetic detectors. Next, several ways to achieve HOT detector operation have been elaborated including non-equilibrium detector design with Auger suppression and optical immersion. Recently, a new strategies used to achieve HOT detectors include barrier structures such as nBn, material improvement to lower generation-recombination leakage mechanisms, alternate materials such as superlattices and cascade infrared devices. Another method to reduce detector’s dark current is reducing volume of detector material via a concept of photon trapping detector.In this paper, a number of concepts to improve performance of photon detectors operating at near room temperature are presented. Mostly three types of detector materials are considered — HgCdTe and InAsSb ternary alloys, and type-II InAs/GaSb superlattice. Recently, advanced heterojunction photovoltaic detectors have been developed. Novel HOT detector designs, so called interband cascade infrared detectors, have emerged as competitors of HgCdTe photodetectors.

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Section: Sb-based Iii-v Photodetectorsmentioning

confidence: 99%

HOT infrared photodetectors

Martyniuk

Rogalski

2013

Opto-Electronics Review

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“…Hence the InSb PVS also works as an absolute irradiation detector, able to detect the presence of a static human body. Details on the temperature difference sensitivity of the InSb PVS can be found elsewhere [10]. …”

Section: Experimental 21 Structure Of Insb Photodiodementioning

confidence: 99%

“…The peak detectivity of the InSb PVS was between 5 and 6 µm, and the cutoff wavelength was 6.8 µm [9]. After dual flat non-leaded packaging with a window for light incidence, the final external size of the InSb PVS was 2.2 × 2.7 × 0.7 mm [10]. We report here on the optimised amount of p-type dopant in the InSb PVS.…”

Section: Introductionmentioning

confidence: 99%

Miniaturized InSb mid‐IR photovoltaic sensor for room temperature operation

Ueno

Camargo

Morishita

et al. 2008

Phys. Status Solidi (c)

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We have developed a miniaturized InSb middle‐infrared photovoltaic sensor (InSb PVS) that operates at room temperature. A single InSb photodiode of the InSb PVS consists of an InSb p+‐p–‐n+ photodiode structure grown on a semi‐insulating GaAs (100) substrate, with a p+‐Al0.17In 0.83 Sb barrier layer between p+ and p– layers to reduce diffusion of photo‐excited electrons. The n‐ and p‐type dopants used are Sn and Zn, respectively. To avoid 1/f noise, we operated our InSb photodiode in photovoltaic mode to output an open‐circuit voltage. Moreover, to improve the signal‐to‐noise ratio, 700 photodiodes arranged on a 600 × 600 μm chip were serially connected to each other. We found that the output signal voltage of the sensor depends on the Zn doping concentration in the p– layer. The peak output voltage was obtained at about 6 × 1016 cm–3, which corresponded to the minimum value of the carrier concentration in the p– layer. After packaging, the final external size of the sensor was 2.2 × 2.7 × 0.7 mm. To our knowledge, our sensor is the smallest uncooled sensor in the mid‐IR range reported up to now. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…1. Many studies on partly miniaturized IR analysis system component have been reported to achieve minimizing IR analysis system [12,13]. Especially, researches focused on miniaturization of IR source, IR lenses and IR detector are widely reported [14,15].…”

Section: Introductionmentioning

confidence: 99%

Design and Fabrication of Miniaturized Optical Chopper Operated by Electromagnetic Actuation

Kim¹,

Min²,

Choi³

et al. 2014

Journal of Sensor Science and Technology

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An existing infrared (IR) analysis system is generally composed of infrared source, IR focusing lenses, IR detector, and optical chopper. An optical chopper is widely used in combination with lock-in amplifier to improve the signal-to-noise ratio by periodically interrupting incident light beam. During recent years, a few researches on miniaturized optical chopper have been reported to apply to microscaled optical systems. In this paper, a micro optical chopper operated by electromagnetic actuation is proposed and applied to a miniaturized micro-scaled optical system operating in IR spectral range. Additionally, the fabrication method of the proposed micro chopper is demonstrated. The proposed micro optical chopper is composed of the polydimethylsiloxane (PDMS) membrane, solenoid, and permanent magnet. The permanent magnet is bonded on the PDMS membrane using an ultraviolet-activated adhesive. The operation of the chopper is based on the attractive and repulsive forces between permanent magnet and solenoid induced by an electrical current flowing through the solenoid. The fabricated micro optical chopper could operate up to 200 Hz of frequency. The maximum operating distance of the chopper with 7 mm diameter membrane was 750 µm at 100 Hz of frequency.

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High-Sensitivity Temperature Measurement With Miniaturized InSb Mid-IR Sensor

Cited by 21 publications

References 12 publications

HOT infrared photodetectors

HOT infrared photodetectors

Miniaturized InSb mid‐IR photovoltaic sensor for room temperature operation

Design and Fabrication of Miniaturized Optical Chopper Operated by Electromagnetic Actuation

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