High Tc superconductor microwave resonators and filters

Suzuki, Koji; Fujino, S.; Takenaka, T.; Yamaguchi, Keita; Morishita, Tadataka; Imai, K.; Suginoshita, Fumiyasu; Yazawa, N.; Kobayashi, M.

doi:10.1016/0964-1807(93)90306-m

Cited by 8 publications

(3 citation statements)

References 12 publications

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“…can benefit from integration with commercially available semiconducting substrates such as Si, Ge, GaAs, GaN, etc. One such device, as suggested by Suzuki et al, is shown in Figure B, wherein an HTS‐based band‐pass filter is integrated with InGaAs‐based high electron mobility transistor device. Such efforts enable single‐chip device solutions exhibiting better control and communication between the device components.…”

Section: Introductionmentioning

confidence: 99%

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Thin‐Film‐Based Integrated High‐Transition‐Temperature Superconductor Devices

Balasubramanian

Xing

Strugo

et al. 2019

Adv Funct Materials

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Since the discovery of superconductivity at temperatures above the technologically promising liquid nitrogen temperatures, applications based on superconductors have expanded and are being put to commercial use. However, superconductivity at higher temperatures typically occurs in complex materials requiring stringent material and environmental constraints. Such restraints make the realization and integration of these materials with normal materials a nontrivial aspect. In this progress report, unique features of these superconductors in terms of their synthesis, physical properties determining interface electrical transport, and their applications are discussed. A detailed progress report on these applications with remarks on efforts taken to integrate these devices with traditional platforms and semiconducting materials is provided.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Thin‐Film‐Based Integrated High‐Transition‐Temperature Superconductor Devices

Balasubramanian

Xing

Strugo

et al. 2019

Adv Funct Materials

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“…8,9 Also of interest are applications in passive microwave devices such as delay lines and filters that utilize the inherently low surface resistance of HTS materials. [10][11][12][13][14] This latter technology is likely to be a large-scale application of HTS thin films and would significantly impact cellular telecommunication. 15 Numerous laboratory examples of such microwave devices have been demonstrated for YBa 2 Cu 3 O 72x films.…”

Section: Introductionmentioning

confidence: 99%

Thin films for superconducting electronics: Precursor performance issues, deposition mechanisms, and superconducting phase formation-processing strategies in the growth of Tl₂Ba₂CaCu₂O₈films by metal-organic chemical vapor deposition

et al. 1997

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Epitaxial Tl2Ba2CaCu2O8 thin films with excellent electrical transport characteristics are grown in a two-step process involving metal-organic chemical vapor deposition (MOCVD) of a BaCaCuO(F) thin film followed by a postanneal in the presence of Tl2O vapor. Vapor pressure characteristics of the recently developed liquid metal-organic precursors Ba(hfa)2 • mep (hfa = hexafluoroacetylacetonate, mep = methylethylpentaglyme), Ca(hfa)2 • tet (tet = tetraglyme), and the solid precursor Cu(dpm)2 (dpm = dipivaloylmethanate) are characterized by low pressure thermogravimetric analysis. Under typical film growth conditions, transport is shown to be diffusion limited. The transport rate of Ba(hfa)2 • mep is demonstrated to be stable for over 85 h at typical MOCVD temperatures (120 °C). In contrast, the vapor pressure stability of the commonly used Ba precursor, Ba(dpm)2, deteriorates rapidly at typical growth temperatures, and the decrease in vapor pressure is approximately exponential with a half-life of ∼9.4 h. These precursors are employed in a low pressure (5 Torr) horizontal, hot-wall, film growth reactor for growth of BaCaCuO(F) thin films on (110) LaAlO3 substrates. From the dependence of film deposition rate on substrate temperature and precursor partial pressure, the kinetics of deposition are shown to be mass-transport limited over the temperature range 350–650 °C at a 20 nm/min deposition rate. A ligand exchange process which yields volatile Cu(hfa)2 and Cu(hfa) (dpm) is also observed under film growth conditions. The MOCVD-derived BaCaCuO(F) films are postannealed in the presence of bulk Tl2Ba2CaCu2O8 at temperatures of 720–890 °C in flowing atmospheres ranging from 0–100% O2. The resulting Tl2Ba2CaCu2O8 films are shown to be epitaxial by x-ray diffraction and transmission electron microscopic (TEM) analysis with the c-axis normal to the substrate surface, with in-plane alignment, and with abrupt film-substrate interfaces. The best films exhibit a Tc = 105 K, transport-measured Jc= 1.2 × 105 A/cm2 at 77 K, and surface resistances as low as 0.4 mΩ (40 K, 10 GHz).

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